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Geisz, J. F., Kurtz, Sarah, Wanlass, M. W., Ward, J. S., Duda, A., Friedman, D. J., Olson, J. M., McMahon, W. E., Moriarty, T. E., Kiehl, J. T. (2007) High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction. Applied Physics Letters, 91 (2). 23502pp. doi:10.1063/1.2753729

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Reference TypeJournal (article/letter/editorial)
TitleHigh-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
JournalApplied Physics Letters
AuthorsGeisz, J. F.Author
Kurtz, SarahAuthor
Wanlass, M. W.Author
Ward, J. S.Author
Duda, A.Author
Friedman, D. J.Author
Olson, J. M.Author
McMahon, W. E.Author
Moriarty, T. E.Author
Kiehl, J. T.Author
Year2007 (July 9)Volume91
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2753729Search in ResearchGate
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Mindat Ref. ID8557400Long-form Identifiermindat:1:5:8557400:1
GUID0
Full ReferenceGeisz, J. F., Kurtz, Sarah, Wanlass, M. W., Ward, J. S., Duda, A., Friedman, D. J., Olson, J. M., McMahon, W. E., Moriarty, T. E., Kiehl, J. T. (2007) High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction. Applied Physics Letters, 91 (2). 23502pp. doi:10.1063/1.2753729
Plain TextGeisz, J. F., Kurtz, Sarah, Wanlass, M. W., Ward, J. S., Duda, A., Friedman, D. J., Olson, J. M., McMahon, W. E., Moriarty, T. E., Kiehl, J. T. (2007) High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction. Applied Physics Letters, 91 (2). 23502pp. doi:10.1063/1.2753729
In(2007, July) Applied Physics Letters Vol. 91 (2) AIP Publishing

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Geisz, J. F., Friedman, D. J., Ward, J. S., Duda, A., Olavarria, W. J., Moriarty, T. E., Kiehl, J. T., Romero, M. J., Norman, A. G., Jones, K. M. (2008) 40.8% efficient inverted triple-junction solar cell with two independently metamorphic junctions. Applied Physics Letters, 93 (12). 123505pp. doi:10.1063/1.2988497
Geisz, J. F., Steiner, M. A., García, I., Kurtz, S. R., Friedman, D. J. (2013) Enhanced external radiative efficiency for 20.8% efficient single-junction GaInP solar cells. Applied Physics Letters, 103 (4). 41118pp. doi:10.1063/1.4816837
Bertness, K. A., Kurtz, Sarah R., Friedman, D. J., Kibbler, A. E., Kramer, C., Olson, J. M. (1994) 29.5%‐efficient GaInP/GaAs tandem solar cells. Applied Physics Letters, 65 (8). 989-991 doi:10.1063/1.112171
Steiner, M. A., Geisz, J. F., García, I., Friedman, D. J., Duda, A., Kurtz, S. R. (2013) Optical enhancement of the open-circuit voltage in high quality GaAs solar cells. Journal of Applied Physics, 113 (12). 123109pp. doi:10.1063/1.4798267
Jain, Nikhil, Schulte, Kevin L., Geisz, John F., Friedman, Daniel J., France, Ryan M., Perl, Emmett E., Norman, Andrew G., Guthrey, Harvey L., Steiner, Myles A. (2018) High-efficiency inverted metamorphic 1.7/1.1 eV GaInAsP/GaInAs dual-junction solar cells. Applied Physics Letters, 112 (5). 53905pp. doi:10.1063/1.5008517
Shan, W., Walukiewicz, W., Ager, J. W., Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., Kurtz, Sarah R. (1999) Effect of nitrogen on the band structure of GaInNAs alloys. Journal of Applied Physics, 86 (4). 2349-2351 doi:10.1063/1.371148
Geisz, J. F., Friedman, D. J., Olson, J. M., Kurtz, Sarah R., Reedy, R. C., Swartzlander, A. B., Keyes, B. M., Norman, A. G. (2000) BGaInAs alloys lattice matched to GaAs. Applied Physics Letters, 76 (11). 1443-1445 doi:10.1063/1.126058
Jiang, C.-S., Friedman, D. J., Geisz, J. F., Moutinho, H. R., Romero, M. J., Al-Jassim, M. M. (2003) Distribution of built-in electrical potential in GaInP2/GaAs tandem-junction solar cells. Applied Physics Letters, 83 (8). 1572-1574 doi:10.1063/1.1602575
Shan, W., Walukiewicz, W., Ager, J. W., Haller, E. E., Geisz, J. F., Friedman, D. J., Olson, J. M., Kurtz, S. R. (1999) Band Anticrossing in GaInNAs Alloys. Physical Review Letters, 82 (6). 1221-1224 doi:10.1103/physrevlett.82.1221
Kurtz, Sarah, Geisz, J. F., Keyes, B. M., Metzger, W. K., Friedman, D. J., Olson, J. M., Ptak, A. J., King, R. R., Karam, N. H. (2003) Effect of growth rate and gallium source on GaAsN. Applied Physics Letters, 82 (16). 2634-2636 doi:10.1063/1.1565500
Shan, W., Walukiewicz, W., Wu, J., Yu, K. M., Ager, J. W., Li, S. X., Haller, E. E., Geisz, J. F., Friedman, D. J., Kurtz, Sarah R. (2003) Band-gap bowing effects in BxGa1−xAs alloys. Journal of Applied Physics, 93 (5). 2696-2699 doi:10.1063/1.1540230
 
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