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Wu, Y. Q., Xuan, Y., Shen, T., Ye, P. D., Cheng, Z., Lochtefeld, A. (2007) Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters, 91 (2). 22108pp. doi:10.1063/1.2756106

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
JournalApplied Physics Letters
AuthorsWu, Y. Q.Author
Xuan, Y.Author
Shen, T.Author
Ye, P. D.Author
Cheng, Z.Author
Lochtefeld, A.Author
Year2007 (July 9)Volume91
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2756106Search in ResearchGate
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Mindat Ref. ID8557467Long-form Identifiermindat:1:5:8557467:6
GUID0
Full ReferenceWu, Y. Q., Xuan, Y., Shen, T., Ye, P. D., Cheng, Z., Lochtefeld, A. (2007) Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters, 91 (2). 22108pp. doi:10.1063/1.2756106
Plain TextWu, Y. Q., Xuan, Y., Shen, T., Ye, P. D., Cheng, Z., Lochtefeld, A. (2007) Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters, 91 (2). 22108pp. doi:10.1063/1.2756106
In(2007, July) Applied Physics Letters Vol. 91 (2) AIP Publishing

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Xu, M., Wu, Y. Q., Koybasi, O., Shen, T., Ye, P. D. (2009) Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics. Applied Physics Letters, 94 (21). 212104pp. doi:10.1063/1.3147218
Lin, H. C., Yang, T., Sharifi, H., Kim, S. K., Xuan, Y., Shen, T., Mohammadi, S., Ye, P. D. (2007) Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric. Applied Physics Letters, 91 (21). 212101pp. doi:10.1063/1.2814052
Xuan, Y., Lin, H. C., Ye, P. D., Wilk, G. D. (2006) Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited Al2O3 gate dielectric. Applied Physics Letters, 88 (26). 263518pp. doi:10.1063/1.2217258
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Wang, W., Deng, J., Hwang, J. C. M., Xuan, Y., Wu, Y., Ye, P. D. (2010) Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 96 (7). 72102pp. doi:10.1063/1.3315870
Gu, J. J., Wu, Y. Q., Ye, P. D. (2011) Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors. Journal of Applied Physics, 109 (5). 53709pp. doi:10.1063/1.3553440
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