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Lee, T.-H., Huang, C.-H., Yang, Y. Y., Suryasindhu, T., Li, P. W. (2007) Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer. Applied Physics Letters, 91 (20). 203119pp. doi:10.1063/1.2806913

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Reference TypeJournal (article/letter/editorial)
TitleNanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer
JournalApplied Physics Letters
AuthorsLee, T.-H.Author
Huang, C.-H.Author
Yang, Y. Y.Author
Suryasindhu, T.Author
Li, P. W.Author
Year2007 (November 12)Volume91
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.2806913Search in ResearchGate
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Mindat Ref. ID8557631Long-form Identifiermindat:1:5:8557631:9
GUID0
Full ReferenceLee, T.-H., Huang, C.-H., Yang, Y. Y., Suryasindhu, T., Li, P. W. (2007) Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer. Applied Physics Letters, 91 (20). 203119pp. doi:10.1063/1.2806913
Plain TextLee, T.-H., Huang, C.-H., Yang, Y. Y., Suryasindhu, T., Li, P. W. (2007) Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer. Applied Physics Letters, 91 (20). 203119pp. doi:10.1063/1.2806913
In(2007, November) Applied Physics Letters Vol. 91 (20) AIP Publishing

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