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Dahal, R., Al Tahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2007) AlN avalanche photodetectors. Applied Physics Letters, 91 (24). 243503pp. doi:10.1063/1.2823588

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Reference TypeJournal (article/letter/editorial)
TitleAlN avalanche photodetectors
JournalApplied Physics Letters
AuthorsDahal, R.Author
Al Tahtamouni, T. M.Author
Lin, J. Y.Author
Jiang, H. X.Author
Year2007 (December 10)Volume91
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2823588Search in ResearchGate
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Mindat Ref. ID8558500Long-form Identifiermindat:1:5:8558500:7
GUID0
Full ReferenceDahal, R., Al Tahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2007) AlN avalanche photodetectors. Applied Physics Letters, 91 (24). 243503pp. doi:10.1063/1.2823588
Plain TextDahal, R., Al Tahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2007) AlN avalanche photodetectors. Applied Physics Letters, 91 (24). 243503pp. doi:10.1063/1.2823588
In(2007, December) Applied Physics Letters Vol. 91 (24) AIP Publishing

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Dahal, R., Al Tahtamouni, T. M., Fan, Z. Y., Lin, J. Y., Jiang, H. X. (2007) Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors. Applied Physics Letters, 90 (26). 263505pp. doi:10.1063/1.2752126
Al tahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2012) High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors. Applied Physics Letters, 101 (19). 192106pp. doi:10.1063/1.4766732
Dahal, R., Li, J., Fan, Z. Y., Nakarmi, M. L., Tahtamouni, T. M. Al, Lin, J. Y., Jiang, H. X. (2008) AlN MSM and Schottky photodetectors. physica status solidi (c), 5 (6). 2148-2151 doi:10.1002/pssc.200778489
Pantha, B. N., Nepal, N., Al Tahtamouni, T. M., Nakarmi, M. L., Li, J., Lin, J. Y., Jiang, H. X. (2007) Correlation between biaxial stress and free exciton transition in AlN epilayers. Applied Physics Letters, 91 (12). 121117pp. doi:10.1063/1.2789182
Sedhain, A., Al Tahtamouni, T. M., Li, J., Lin, J. Y., Jiang, H. X. (2008) Beryllium acceptor binding energy in AlN. Applied Physics Letters, 93 (14). 141104pp. doi:10.1063/1.2996977
Al Tahtamouni, T. M., Sedhain, A., Lin, J. Y., Jiang, H. X. (2007) Growth and photoluminescence studies of a-plane AlN∕AlxGa1−xN quantum wells. Applied Physics Letters, 90 (22). 221105pp. doi:10.1063/1.2743956
Li, J., Fan, Z. Y., Dahal, R., Nakarmi, M. L, Lin, J. Y., Jiang, H. X. (2006) 200nm deep ultraviolet photodetectors based on AlN. Applied Physics Letters, 89 (21). 213510pp. doi:10.1063/1.2397021
Al tahtamouni, T. M., Lin, J. Y., Jiang, H. X. (2012) Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells. Applied Physics Letters, 101 (4). 42103pp. doi:10.1063/1.4737941
Nikishin, S., Borisov, B., Pandikunta, M., Dahal, R., Lin, J. Y., Jiang, H. X., Harris, H., Holtz, M. (2009) High quality AlN for deep UV photodetectors. Applied Physics Letters, 95 (5). 54101pp. doi:10.1063/1.3200229
Al Tahtamouni, T. M., Nepal, N., Lin, J. Y., Jiang, H. X., Chow, W. W. (2006) Growth and photoluminescence studies of Al-rich AlN∕AlxGa1−xN quantum wells. Applied Physics Letters, 89 (13). 131922pp. doi:10.1063/1.2358107
Sedhain, A., Nepal, N., Nakarmi, M. L., Al tahtamouni, T. M., Lin, J. Y., Jiang, H. X., Gu, Z., Edgar, J. H. (2008) Photoluminescence properties of AlN homoepilayers with different orientations. Applied Physics Letters, 93 (4). 41905pp. doi:10.1063/1.2965613
 
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