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Hamadani, B. H., Gundlach, D. J., McCulloch, I., Heeney, M. (2007) Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1. Applied Physics Letters, 91 (24). 243512pp. doi:10.1063/1.2824845

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Reference TypeJournal (article/letter/editorial)
TitleUndoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1
JournalApplied Physics Letters
AuthorsHamadani, B. H.Author
Gundlach, D. J.Author
McCulloch, I.Author
Heeney, M.Author
Year2007 (December 10)Volume91
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2824845Search in ResearchGate
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Mindat Ref. ID8558570Long-form Identifiermindat:1:5:8558570:6
GUID0
Full ReferenceHamadani, B. H., Gundlach, D. J., McCulloch, I., Heeney, M. (2007) Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1. Applied Physics Letters, 91 (24). 243512pp. doi:10.1063/1.2824845
Plain TextHamadani, B. H., Gundlach, D. J., McCulloch, I., Heeney, M. (2007) Undoped polythiophene field-effect transistors with mobility of 1cm2V−1s−1. Applied Physics Letters, 91 (24). 243512pp. doi:10.1063/1.2824845
In(2007, December) Applied Physics Letters Vol. 91 (24) AIP Publishing

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