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Marent, A., Geller, M., Schliwa, A., Feise, D., Pötschke, K., Bimberg, D., Akçay, N., Öncan, N. (2007) 106years extrapolated hole storage time in GaSb∕AlAs quantum dots. Applied Physics Letters, 91 (24). 242109pp. doi:10.1063/1.2824884

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Reference TypeJournal (article/letter/editorial)
Title106years extrapolated hole storage time in GaSb∕AlAs quantum dots
JournalApplied Physics Letters
AuthorsMarent, A.Author
Geller, M.Author
Schliwa, A.Author
Feise, D.Author
Pötschke, K.Author
Bimberg, D.Author
Akçay, N.Author
Öncan, N.Author
Year2007 (December 10)Volume91
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2824884Search in ResearchGate
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Mindat Ref. ID8558577Long-form Identifiermindat:1:5:8558577:9
GUID0
Full ReferenceMarent, A., Geller, M., Schliwa, A., Feise, D., Pötschke, K., Bimberg, D., Akçay, N., Öncan, N. (2007) 106years extrapolated hole storage time in GaSb∕AlAs quantum dots. Applied Physics Letters, 91 (24). 242109pp. doi:10.1063/1.2824884
Plain TextMarent, A., Geller, M., Schliwa, A., Feise, D., Pötschke, K., Bimberg, D., Akçay, N., Öncan, N. (2007) 106years extrapolated hole storage time in GaSb∕AlAs quantum dots. Applied Physics Letters, 91 (24). 242109pp. doi:10.1063/1.2824884
In(2007, December) Applied Physics Letters Vol. 91 (24) AIP Publishing

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Geller, M., Marent, A., Nowozin, T., Bimberg, D., Akçay, N., Öncan, N. (2008) A write time of 6ns for quantum dot–based memory structures. Applied Physics Letters, 92 (9). 92108pp. doi:10.1063/1.2890731
Nowozin, T., Marent, A., Geller, M., Bimberg, D., Akçay, N., Öncan, N. (2009) Temperature and electric field dependence of the carrier emission processes in a quantum dot-based memory structure. Applied Physics Letters, 94 (4). 42108pp. doi:10.1063/1.3076126
Marent, A., Geller, M., Bimberg, D., Vasi’ev, A. P., Semenova, E. S., Zhukov, A. E., Ustinov, V. M. (2006) Carrier storage time of milliseconds at room temperature in self-organized quantum dots. Applied Physics Letters, 89 (7). 72103pp. doi:10.1063/1.2337000
Geller, M., Marent, A., Stock, E., Bimberg, D., Zubkov, V. I., Shulgunova, I. S., Solomonov, A. V. (2006) Hole capture into self-organized InGaAs quantum dots. Applied Physics Letters, 89 (23). 232105pp. doi:10.1063/1.2400059
Geller, M., Kapteyn, C., Müller-Kirsch, L., Heitz, R., Bimberg, D. (2003) 450 meV hole localization in GaSb/GaAs quantum dots. Applied Physics Letters, 82 (16). 2706-2708 doi:10.1063/1.1569413
Timm, R., Eisele, H., Lenz, A., Becker, S. K., Grabowski, J., Kim, T.-Y., Müller-Kirsch, L., Pötschke, K., Pohl, U. W., Bimberg, D., Dähne, M. (2004) Structure and intermixing of GaSb∕GaAs quantum dots. Applied Physics Letters, 85 (24). 5890-5892 doi:10.1063/1.1833560
Hayne, M., Maes, J., Bersier, S., Moshchalkov, V. V., Schliwa, A., Müller-Kirsch, L., Kapteyn, C., Heitz, R., Bimberg, D. (2003) Electron localization by self-assembled GaSb/GaAs quantum dots. Applied Physics Letters, 82 (24). 4355-4357 doi:10.1063/1.1583853
Seguin, R., Schliwa, A., Germann, T. D., Rodt, S., Pötschke, K., Strittmatter, A., Pohl, U. W., Bimberg, D., Winkelnkemper, M., Hammerschmidt, T., Kratzer, P. (2006) Control of fine-structure splitting and excitonic binding energies in selected individual InAs∕GaAs quantum dots. Applied Physics Letters, 89 (26). 263109pp. doi:10.1063/1.2424446
Marent, A., Nowozin, T., Gelze, J., Luckert, F., Bimberg, D. (2009) Hole-based memory operation in an InAs/GaAs quantum dot heterostructure. Applied Physics Letters, 95 (24). 242114pp. doi:10.1063/1.3275758
Nowozin, T., Marent, A., Bimberg, D., Beckel, A., Marquardt, B., Lorke, A., Geller, M. (2012) Time-resolved detection of many-particle hole states in InAs/GaAs quantum dots using a two-dimensional hole gas up to 77 K. physica status solidi (c), 9 (2). 243-246 doi:10.1002/pssc.201100218
Pohl, U. W., Pötschke, K., Schliwa, A., Guffarth, F., Bimberg, D., Zakharov, N. D., Werner, P., Lifshits, M. B., Shchukin, V. A., Jesson, D. E. (2005) Evolution of a multimodal distribution of self-organizedInAs∕GaAsquantum dots. Physical Review B, 72 (24) doi:10.1103/physrevb.72.245332
 
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