Reference Type | Journal (article/letter/editorial) |
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Title | Stress-induced band gap tuning in ⟨112⟩ silicon nanowires |
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Journal | Applied Physics Letters |
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Authors | Lu, A. J. | Author |
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Zhang, R. Q. | Author |
Lee, S. T. | Author |
Year | 2007 (December 24) | Volume | 91 |
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Issue | 26 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.2826267Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8558909 | Long-form Identifier | mindat:1:5:8558909:4 |
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GUID | 0 |
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Full Reference | Lu, A. J., Zhang, R. Q., Lee, S. T. (2007) Stress-induced band gap tuning in ⟨112⟩ silicon nanowires. Applied Physics Letters, 91 (26). 263107pp. doi:10.1063/1.2826267 |
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Plain Text | Lu, A. J., Zhang, R. Q., Lee, S. T. (2007) Stress-induced band gap tuning in ⟨112⟩ silicon nanowires. Applied Physics Letters, 91 (26). 263107pp. doi:10.1063/1.2826267 |
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In | (2007, December) Applied Physics Letters Vol. 91 (26) AIP Publishing |
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