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Yan, F., Migliorato, P., Ishihara, R. (2007) Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors. Applied Physics Letters, 91 (7). 73509pp. doi:10.1063/1.2769951

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Reference TypeJournal (article/letter/editorial)
TitleSimulation of twin boundary effect on characteristics of single grain-silicon thin film transistors
JournalApplied Physics Letters
AuthorsYan, F.Author
Migliorato, P.Author
Ishihara, R.Author
Year2007 (August 13)Volume91
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2769951Search in ResearchGate
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Mindat Ref. ID8559973Long-form Identifiermindat:1:5:8559973:6
GUID0
Full ReferenceYan, F., Migliorato, P., Ishihara, R. (2007) Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors. Applied Physics Letters, 91 (7). 73509pp. doi:10.1063/1.2769951
Plain TextYan, F., Migliorato, P., Ishihara, R. (2007) Simulation of twin boundary effect on characteristics of single grain-silicon thin film transistors. Applied Physics Letters, 91 (7). 73509pp. doi:10.1063/1.2769951
In(2007, August) Applied Physics Letters Vol. 91 (7) AIP Publishing

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Yan, F., Migliorato, P., Ishihara, R. (2006) Influence of trap states on dynamic properties of single grain silicon thin film transistors. Applied Physics Letters, 88 (15). 153507pp. doi:10.1063/1.2193049
Yan, Feng, Hong, Yi, Migliorato, Piero (2007) Temperature dependent characteristics of all polymer thin-film transistors based on poly(9,9-dioctylfluorene-co-bithiophene). Journal of Applied Physics, 101 (6). 64501pp. doi:10.1063/1.2710444
Coxon, P., Lloyd, M., Migliorato, P. (1986) Self‐aligned polycrystalline silicon thin‐film transistors by laser implantation. Applied Physics Letters, 48 (26). 1785-1786 doi:10.1063/1.96786
Yan, Feng, Migliorato, Piero, Shimoda, Tatsuya (2003) Investigation of trap processes in polycrystalline silicon thin film transistors by ac measurement. Applied Physics Letters, 82 (13). 2062-2064 doi:10.1063/1.1564635
Yan, Feng, Migliorato, Piero, Hong, Yi, Rana, V., Ishihara, R., Hiroshima, Y., Abe, D., Inoue, S., Shimoda, T. (2005) Gate oxide induced switch-on undershoot current observed in thin-film transistors. Applied Physics Letters, 86 (25). 253504pp. doi:10.1063/1.1954896
Ikeda, H. (2002) Evaluation of grain boundary trap states in polycrystalline–silicon thin-film transistors by mobility and capacitance measurements. Journal of Applied Physics, 91 (7). 4637-4645 doi:10.1063/1.1454202
Bavidge, N., Boero, M., Migliorato, P., Shimoda, T. (2000) Switch-on transient behavior in low-temperature polycrystalline silicon thin-film transistors. Applied Physics Letters, 77 (23). 3836-3838 doi:10.1063/1.1329867
Yan, F., Estrela, P., Mo, Y., Migliorato, P., Maeda, H., Inoue, S., Shimoda, T. (2005) Polycrystalline silicon ion sensitive field effect transistors. Applied Physics Letters, 86 (5). 53901pp. doi:10.1063/1.1854192
Kuo, Po-Chin, Jamshidi-Roudbari, Abbas, Hatalis, Miltiadis (2007) Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on stainless steel foil. Applied Physics Letters, 91 (24). 243507pp. doi:10.1063/1.2824812
Meakin, D. B., Coxon, P. A., Migliorato, P., Stoemenos, J., Economou, N. A. (1987) High‐performance thin‐film transistors from optimized polycrystalline silicon films. Applied Physics Letters, 50 (26). 1894-1896 doi:10.1063/1.97678
Dimitriadis, C. A. (1993) Grain boundary trap distribution in polycrystalline silicon thin‐film transistors. Journal of Applied Physics, 73 (8). 4086-4088 doi:10.1063/1.352836
 
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