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Pei, Yanli, Nishijima, Masahiko, Fukushima, Takafumi, Tanaka, Tetsu, Koyanagi, Mitsumasa (2008) Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride. Applied Physics Letters, 93 (11). 113115pp. doi:10.1063/1.2986409

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Reference TypeJournal (article/letter/editorial)
TitleMemory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride
JournalApplied Physics Letters
AuthorsPei, YanliAuthor
Nishijima, MasahikoAuthor
Fukushima, TakafumiAuthor
Tanaka, TetsuAuthor
Koyanagi, MitsumasaAuthor
Year2008 (September 15)Volume93
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.2986409Search in ResearchGate
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Mindat Ref. ID8567239Long-form Identifiermindat:1:5:8567239:4
GUID0
Full ReferencePei, Yanli, Nishijima, Masahiko, Fukushima, Takafumi, Tanaka, Tetsu, Koyanagi, Mitsumasa (2008) Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride. Applied Physics Letters, 93 (11). 113115pp. doi:10.1063/1.2986409
Plain TextPei, Yanli, Nishijima, Masahiko, Fukushima, Takafumi, Tanaka, Tetsu, Koyanagi, Mitsumasa (2008) Memory characteristics of self-assembled tungsten nanodots dispersed in silicon nitride. Applied Physics Letters, 93 (11). 113115pp. doi:10.1063/1.2986409
In(2008, September) Applied Physics Letters Vol. 93 (11) AIP Publishing

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