Vote for your favorite mineral in #MinCup25! - Pectolite vs. Haüyne
It's a pair of striking blue beauties as #pectolite the uncrushable faces off against #hauyne, the phoenix from volcanic ashes!
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Nakashima, S., Kitamura, T., Kato, T., Kojima, K., Kosugi, R., Okumura, H., Tsuchida, H., Ito, M. (2008) Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering. Applied Physics Letters, 93 (12). 121913pp. doi:10.1063/1.2992063

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleDetermination of free carrier density in the low doping regime of 4H-SiC by Raman scattering
JournalApplied Physics Letters
AuthorsNakashima, S.Author
Kitamura, T.Author
Kato, T.Author
Kojima, K.Author
Kosugi, R.Author
Okumura, H.Author
Tsuchida, H.Author
Ito, M.Author
Year2008 (September 22)Volume93
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.2992063Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8567508Long-form Identifiermindat:1:5:8567508:1
GUID0
Full ReferenceNakashima, S., Kitamura, T., Kato, T., Kojima, K., Kosugi, R., Okumura, H., Tsuchida, H., Ito, M. (2008) Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering. Applied Physics Letters, 93 (12). 121913pp. doi:10.1063/1.2992063
Plain TextNakashima, S., Kitamura, T., Kato, T., Kojima, K., Kosugi, R., Okumura, H., Tsuchida, H., Ito, M. (2008) Determination of free carrier density in the low doping regime of 4H-SiC by Raman scattering. Applied Physics Letters, 93 (12). 121913pp. doi:10.1063/1.2992063
In(2008, September) Applied Physics Letters Vol. 93 (12) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Nagaya, K., Hirayama, T., Tawara, T., Murata, K., Tsuchida, H., Miyasaka, A., Kojima, K., Kato, T., Okumura, H., Kato, M. (2020) Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system. Journal of Applied Physics, 128 (10) 105702pp. doi:10.1063/5.0015199
Mitani, Takeshi, Nakashima, Shin-ichi, Kojima, Kazutoshi, Kato, Tomohisa, Okumura, Hajime (2012) Determination of carrier concentration by Fano interference of Raman scattering in heavily doped n-type 4H-SiC. Journal of Applied Physics, 112 (4). 43514pp. doi:10.1063/1.4748279
Kitamura, T., Nakashima, Shinichi, Kato, Tomohisa, Kojima, K., Okumura, Hajime (2008) Characterization of Electrical Properties in SiC Crystals by Raman Scattering Spectroscopy. Materials Science Forum, 600. 501-504 doi:10.4028/www.scientific.net/msf.600-603.501
Tawara, T., Matsunaga, S., Fujimoto, T., Ryo, M., Miyazato, M., Miyazawa, T., Takenaka, K., Miyajima, M., Otsuki, A., Yonezawa, Y., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H. (2018) Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes. Journal of Applied Physics, 123 (2). 25707pp. doi:10.1063/1.5009365
Tawara, T., Miyazawa, T., Ryo, M., Miyazato, M., Fujimoto, T., Takenaka, K., Matsunaga, S., Miyajima, M., Otsuki, A., Yonezawa, Y., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H. (2016) Short minority carrier lifetimes in highly nitrogen-doped 4H-SiC epilayers for suppression of the stacking fault formation in PiN diodes. Journal of Applied Physics, 120 (11). 115101pp. doi:10.1063/1.4962717
Nakashima, S., Kitamura, T., Mitani, T., Okumura, H., Katsuno, M., Ohtani, N. (2007) Raman scattering study of carrier-transport and phonon properties of4H−SiCcrystals with graded doping. Physical Review B, 76 (24) doi:10.1103/physrevb.76.245208
Nakashima, S., Mitani, T., Senzaki, J., Okumura, H., Yamamoto, T. (2005) Deep ultraviolet Raman scattering characterization of ion-implanted SiC crystals. Journal of Applied Physics, 97 (12). 123507pp. doi:10.1063/1.1931039
Murata, K., Tawara, T., Yang, A., Takanashi, R., Miyazawa, T., Tsuchida, H. (2019) Wide-ranging control of carrier lifetimes in n-type 4H-SiC epilayer by intentional vanadium doping. Journal of Applied Physics, 126 (4). 45711pp. doi:10.1063/1.5098101
Iwamoto, N., Johnson, B. C., Hoshino, N., Ito, M., Tsuchida, H., Kojima, K., Ohshima, T. (2013) Defect-induced performance degradation of 4H-SiC Schottky barrier diode particle detectors. Journal of Applied Physics, 113 (14). 143714pp. doi:10.1063/1.4801797
Tokuda, Y., Yamashita, T., Kamata, I., Naijo, T., Miyazawa, T., Hayashi, S., Hoshino, N., Kato, T., Okumura, H., Kimoto, T., Tsuchida, H. (2017) Structural analysis of double-layer Shockley stacking faults formed in heavily-nitrogen-doped 4H-SiC during annealing. Journal of Applied Physics, 122 (4). 45707pp. doi:10.1063/1.4996098
Yugami, H., Nakashima, S., Mitsuishi, A., Uemoto, A., Shigeta, M., Furukawa, K., Suzuki, A., Nakajima, S. (1987) Characterization of the free‐carrier concentrations in doped β‐SiC crystals by Raman scattering. Journal of Applied Physics, 61 (1). 354-358 doi:10.1063/1.338830
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 17, 2025 20:23:30
Go to top of page