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Reimer, M. E., Dalacu, D., Lapointe, J., Poole, P. J., Kim, D., Aers, G. C., McKinnon, W. R., Williams, R. L. (2009) Single electron charging in deterministically positioned InAs/InP quantum dots. Applied Physics Letters, 94 (1). 11108pp. doi:10.1063/1.3063048

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Reference TypeJournal (article/letter/editorial)
TitleSingle electron charging in deterministically positioned InAs/InP quantum dots
JournalApplied Physics Letters
AuthorsReimer, M. E.Author
Dalacu, D.Author
Lapointe, J.Author
Poole, P. J.Author
Kim, D.Author
Aers, G. C.Author
McKinnon, W. R.Author
Williams, R. L.Author
Year2009 (January 5)Volume94
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3063048Search in ResearchGate
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Mindat Ref. ID8572016Long-form Identifiermindat:1:5:8572016:9
GUID0
Full ReferenceReimer, M. E., Dalacu, D., Lapointe, J., Poole, P. J., Kim, D., Aers, G. C., McKinnon, W. R., Williams, R. L. (2009) Single electron charging in deterministically positioned InAs/InP quantum dots. Applied Physics Letters, 94 (1). 11108pp. doi:10.1063/1.3063048
Plain TextReimer, M. E., Dalacu, D., Lapointe, J., Poole, P. J., Kim, D., Aers, G. C., McKinnon, W. R., Williams, R. L. (2009) Single electron charging in deterministically positioned InAs/InP quantum dots. Applied Physics Letters, 94 (1). 11108pp. doi:10.1063/1.3063048
In(2009, January) Applied Physics Letters Vol. 94 (1) AIP Publishing

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Reimer, M. E., Dalacu, D., Lapointe, J., Poole, P. J., McKinnon, W. R., Williams, R. L. (2009) Non-inverted electron-hole alignment in InAs/InP self-assembled quantum dots. physica status solidi (b), 246 (4). 828-831 doi:10.1002/pssb.200880642
Dalacu, D., Poitras, D., Lefebvre, J., Poole, P. J., Aers, G. C., Williams, R. L. (2003) InAs/InP quantum dots in SiO2/Ta2O5-based microcavities. Applied Physics Letters, 82 (26). 4803-4805 doi:10.1063/1.1588369
Reimer, M. E., Korkusiński, M., Dalacu, D., Lefebvre, J., Lapointe, J., Poole, P. J., Aers, G. C., McKinnon, W. R., Hawrylak, P., Williams, R. L. (2008) Prepositioned single quantum dot in a lateral electric field. Physical Review B, 78 (19) doi:10.1103/physrevb.78.195301
Kim, Danny, Sheng, Weidong, Poole, Philip J., Dalacu, Dan, Lefebvre, Jacques, Lapointe, Jean, Reimer, Michael E., Aers, Geoff C., Williams, Robin L. (2009) Tuning the excitongfactor in single InAs/InP quantum dots. Physical Review B, 79 (4) doi:10.1103/physrevb.79.045310
Chithrani, D., Williams, R. L., Lefebvre, J., Poole, P. J., Aers, G. C. (2004) Optical spectroscopy of single, site-selected, InAs/InP self-assembled quantum dots. Applied Physics Letters, 84 (6). 978-980 doi:10.1063/1.1646455
Kim, D., Lefebvre, J., Lapointe, J., Reimer, M. E., Mckee, J., Poole, P. J., Williams, R. L. (2006) Optical spectroscopy of single, planar, self-assembled InAs/InP quantum dots. physica status solidi (c), 3 (11). 3840-3843 doi:10.1002/pssc.200671559
Kim, D., Lefebvre, J., Mckee, J., Studenikin, S., Williams, R. L., Sachrajda, A., Zawadzki, P., Hawrylak, P., Sheng, W., Aers, G. C., Poole, P. J. (2005) Photoluminescence of single, site-selected, InAs∕InP quantum dots in high magnetic fields. Applied Physics Letters, 87 (21). 212105pp. doi:10.1063/1.2135377
Mnaymneh, K., Dalacu, D., Poole, P. J., Williams, R. L. (2013) Strain analysis of highly scalable single InAs/InP quantum dots in a stress-sensitive environment. Applied Physics Letters, 103 (6). 61901pp. doi:10.1063/1.4817758
Frédérick, Simon, Dalacu, Dan, Lapointe, Jean, Poole, Philip J., Aers, Geof C., Williams, Robin L. (2006) Experimental demonstration of high quality factor, x-dipole modes in InAs∕InP quantum dot photonic crystal microcavity membranes. Applied Physics Letters, 89 (9). 91115pp. doi:10.1063/1.2338662
Dalacu, Dan, Frédérick, Simon, Poole, Philip J., Aers, Geof C., Williams, Robin L. (2005) Postfabrication fine-tuning of photonic crystal microcavities in InAs∕InP quantum dot membranes. Applied Physics Letters, 87 (15). 151107pp. doi:10.1063/1.2099516
Ortner, G., Allen, C. Ni., Dion, C., Barrios, P., Poitras, D., Dalacu, D., Pakulski, G., Lapointe, J., Poole, P. J., Render, W., Raymond, S. (2006) External cavity InAs∕InP quantum dot laser with a tuning range of 166nm. Applied Physics Letters, 88 (12). 121119pp. doi:10.1063/1.2187431
 
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