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Zhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Goel, Niti, Lee, Jack C. (2009) High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer. Applied Physics Letters, 94 (19). 193502pp. doi:10.1063/1.3133360

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Reference TypeJournal (article/letter/editorial)
TitleHigh performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer
JournalApplied Physics Letters
AuthorsZhao, HanAuthor
Chen, Yen-TingAuthor
Yum, Jung HwanAuthor
Wang, YanzhenAuthor
Goel, NitiAuthor
Lee, Jack C.Author
Year2009 (May 11)Volume94
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.3133360Search in ResearchGate
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Mindat Ref. ID8573876Long-form Identifiermindat:1:5:8573876:0
GUID0
Full ReferenceZhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Goel, Niti, Lee, Jack C. (2009) High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer. Applied Physics Letters, 94 (19). 193502pp. doi:10.1063/1.3133360
Plain TextZhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Goel, Niti, Lee, Jack C. (2009) High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer. Applied Physics Letters, 94 (19). 193502pp. doi:10.1063/1.3133360
In(2009, May) Applied Physics Letters Vol. 94 (19) AIP Publishing

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Zhao, Han, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C. (2010) Effects of barrier layers on device performance of high mobility In0.7Ga0.3As metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 96 (10). 102101pp. doi:10.1063/1.3350893
Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C. (2009) Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å. Applied Physics Letters, 94 (21). 213505pp. doi:10.1063/1.3143629
Zhao, Han, Zhu, Feng, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Lee, Jack C. (2009) Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics. Applied Physics Letters, 94 (9). 93505pp. doi:10.1063/1.3093442
Chen, Yen-Ting, Zhao, Han, Yum, Jung Hwan, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C. (2009) Improved electrical characteristics of TaN/Al2O3/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors by fluorine incorporation. Applied Physics Letters, 95 (1). 13501pp. doi:10.1063/1.3173820
Xue, Fei, Zhao, Han, Chen, Yen-Ting, Wang, Yanzhen, Zhou, Fei, Lee, Jack C. (2011) High-k InGaAs metal-oxide-semiconductor field-effect-transistors with various barrier layer materials. Applied Physics Letters, 99 (3). 33507pp. doi:10.1063/1.3611502
Zhao, Han, Huang, Jeff, Chen, Yen-Ting, Yum, Jung Hwan, Wang, Yanzhen, Zhou, Fei, Xue, Fei, Lee, Jack C. (2009) Effects of gate-first and gate-last process on interface quality of In0.53Ga0.47As metal-oxide-semiconductor capacitors using atomic-layer-deposited Al2O3 and HfO2 oxides. Applied Physics Letters, 95 (25). 253501pp. doi:10.1063/1.3275001
Zhu, Feng, Zhao, Han, Ok, I., Kim, H. S., Yum, J., Lee, Jack C., Goel, Niti, Tsai, W., Gaspe, C. K., Santos, M. B. (2009) A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer. Applied Physics Letters, 94 (1). 13511pp. doi:10.1063/1.3068752
Xue, Fei, Zhao, Han, Chen, Yen-Ting, Wang, Yanzhen, Zhou, Fei, Lee, Jack C. (2011) InAs inserted InGaAs buried channel metal-oxide-semiconductor field-effect-transistors with atomic-layer-deposited gate dielectric. Applied Physics Letters, 98 (8). 82106pp. doi:10.1063/1.3559609
Chen, Yen-Ting, Zhao, Han, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C. (2010) Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 96 (25). 253502pp. doi:10.1063/1.3457388
Wang, Yanzhen, Chen, Yen-Ting, Zhao, Han, Xue, Fei, Zhou, Fei, Lee, Jack C. (2011) Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor. Applied Physics Letters, 98 (4). 43506pp. doi:10.1063/1.3549197
Chen, Yen-Ting, Zhao, Han, Wang, Yanzhen, Xue, Fei, Zhou, Fei, Lee, Jack C. (2010) Fluorinated HfO2 gate dielectric engineering on In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors. Applied Physics Letters, 96 (10). 103506pp. doi:10.1063/1.3357434
 
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