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Kinch, M. A., Wan, C.-F., Schaake, H., Chandra, D. (2009) Universal 1/f noise model for reverse biased diodes. Applied Physics Letters, 94 (19). 193508pp. doi:10.1063/1.3133982

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Reference TypeJournal (article/letter/editorial)
TitleUniversal 1/f noise model for reverse biased diodes
JournalApplied Physics Letters
AuthorsKinch, M. A.Author
Wan, C.-F.Author
Schaake, H.Author
Chandra, D.Author
Year2009 (May 11)Volume94
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.3133982Search in ResearchGate
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Mindat Ref. ID8573887Long-form Identifiermindat:1:5:8573887:6
GUID0
Full ReferenceKinch, M. A., Wan, C.-F., Schaake, H., Chandra, D. (2009) Universal 1/f noise model for reverse biased diodes. Applied Physics Letters, 94 (19). 193508pp. doi:10.1063/1.3133982
Plain TextKinch, M. A., Wan, C.-F., Schaake, H., Chandra, D. (2009) Universal 1/f noise model for reverse biased diodes. Applied Physics Letters, 94 (19). 193508pp. doi:10.1063/1.3133982
In(2009, May) Applied Physics Letters Vol. 94 (19) AIP Publishing

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Aqariden, F., Shih, H. D., Kinch, M. A., Schaake, H. F. (2001) Electrical properties of low-arsenic-doped HgCdTe grown by molecular beam epitaxy. Applied Physics Letters, 78 (22). 3481-3483 doi:10.1063/1.1370987
Shih, H. D., Kinch, M. A., Aqariden, F., Liao, P. K., Schaake, H. F., Nathan, V. (2003) Development of gold-doped Hg0.79Cd0.21Te for very-long-wavelength infrared detectors. Applied Physics Letters, 82 (23). 4157-4159 doi:10.1063/1.1581369
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Chandra, M M, Prasad, M (1986) Realising linear voltage-temperature characteristics of forward biased diodes. Journal of Physics D: Applied Physics, 19. 89-93 doi:10.1088/0022-3727/19/1/013
Gordon, N. T., Ryal, M. D., Allen, J. W. (1979) Electroluminescence in reverseā€biased ZnS:Mn Schottky diodes. Applied Physics Letters, 35 (9). 691-692 doi:10.1063/1.91256
Davies, A., Craighead, H. G. (1994) Ballisticā€electronā€emission microscopy characteristics of reverseā€biased Schottky diodes. Applied Physics Letters, 64 (21). 2833-2835 doi:10.1063/1.111440
Forrest, S. R., DiDomenico, M., Smith, R. G., Stocker, H. J. (1980) Evidence for tunneling in reverseā€biased IIIā€V photodetector diodes. Applied Physics Letters, 36 (7). 580-582 doi:10.1063/1.91553
Young, A. C., Zimmerman, J. D., Brown, E. R., Gossard, A. C. (2006) 1āˆ•f noise in all-epitaxial metal-semiconductor diodes. Applied Physics Letters, 88 (7). 73518pp. doi:10.1063/1.2174837
Reinhart, F. K. (1968) Reverseā€Biased Gallium Phosphide Diodes as Highā€Frequency Light Modulators. Journal of Applied Physics, 39 (7). 3426-3434 doi:10.1063/1.1656792
Yu, J., Ippolito, S. J., Shafiei, M., Dhawan, D., Wlodarski, W., Kalantar-zadeh, K. (2009) Reverse biased Pt/nanostructured MoO3/SiC Schottky diode based hydrogen gas sensors. Applied Physics Letters, 94 (1). 13504pp. doi:10.1063/1.3054164
Kuksenkov, D. V., Temkin, H., Osinsky, A., Gaska, R., Khan, M. A. (1998) Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction. Applied Physics Letters, 72 (11). 1365-1367 doi:10.1063/1.121056
 
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