Yan, Hu, Kagata, Tsubasa, Okuzaki, Hidenori (2009) Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere. Applied Physics Letters, 94 (2). 23305pp. doi:10.1063/1.3072608
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere | ||
Journal | Applied Physics Letters | ||
Authors | Yan, Hu | Author | |
Kagata, Tsubasa | Author | ||
Okuzaki, Hidenori | Author | ||
Year | 2009 (January 12) | Volume | 94 |
Issue | 2 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3072608Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8574141 | Long-form Identifier | mindat:1:5:8574141:8 |
GUID | 0 | ||
Full Reference | Yan, Hu, Kagata, Tsubasa, Okuzaki, Hidenori (2009) Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere. Applied Physics Letters, 94 (2). 23305pp. doi:10.1063/1.3072608 | ||
Plain Text | Yan, Hu, Kagata, Tsubasa, Okuzaki, Hidenori (2009) Ambipolar pentacene/C60-based field-effect transistors with high hole and electron mobilities in ambient atmosphere. Applied Physics Letters, 94 (2). 23305pp. doi:10.1063/1.3072608 | ||
In | (2009, January) Applied Physics Letters Vol. 94 (2) AIP Publishing |
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