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Noda, K., Terai, Y., Hashimoto, S., Yoneda, K., Fujiwara, Y. (2009) Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy. Applied Physics Letters, 94 (24). 241907pp. doi:10.1063/1.3155204

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Reference TypeJournal (article/letter/editorial)
TitleModifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsNoda, K.Author
Terai, Y.Author
Hashimoto, S.Author
Yoneda, K.Author
Fujiwara, Y.Author
Year2009 (June 15)Volume94
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3155204Search in ResearchGate
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Mindat Ref. ID8575003Long-form Identifiermindat:1:5:8575003:6
GUID0
Full ReferenceNoda, K., Terai, Y., Hashimoto, S., Yoneda, K., Fujiwara, Y. (2009) Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy. Applied Physics Letters, 94 (24). 241907pp. doi:10.1063/1.3155204
Plain TextNoda, K., Terai, Y., Hashimoto, S., Yoneda, K., Fujiwara, Y. (2009) Modifications of direct transition energies in β-FeSi2 epitaxial films grown by molecular beam epitaxy. Applied Physics Letters, 94 (24). 241907pp. doi:10.1063/1.3155204
In(2009, June) Applied Physics Letters Vol. 94 (24) AIP Publishing

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Terai, Y., Yoneda, K., Noda, K., Miura, N., Fujiwara, Y. (2012) Effect of residual impurities on transport properties of β-FeSi2 epitaxial films grown by molecular beam epitaxy. Journal of Applied Physics, 112 (1). 13702pp. doi:10.1063/1.4731246
Noda, K., Terai, Y., Miura, N., Udono, H., Fujiwara, Y. (2012) Growth condition dependence of direct bandgap in β-FeSi2 epitaxial films grown by molecular beam epitaxy. Physics Procedia, 23. 5-8 doi:10.1016/j.phpro.2012.01.002
Noda, K., Terai, Y., Yoneda, K., Fujiwara, Y. (2011) Temperature dependence of direct transition energies in β-Physics Procedia, 11. 181-184 doi:10.1016/j.phpro.2011.01.024
Terai, Yoshikazu, Noda, Keiichi, Hashimoto, Syoutaro, Fujiwara, Yasufumi (2009) Photoreflectance study of β-FeSi2epitaxial films grown by molecular beam epitaxy. Journal of Physics: Conference Series, 165. 12023pp. doi:10.1088/1742-6596/165/1/012023
Yoneda, K., Terai, Y., Noda, K., Miura, N, Fujiwara, Y. (2011) Photoluminescence and photoreflectance studies in Si/β-Physics Procedia, 11. 185-188 doi:10.1016/j.phpro.2011.01.025
Noda, Keiichi, Terai, Yoshikazu, Fujiwara, Yasufumi (2013) Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxy. Journal of Crystal Growth, 378. 376-380 doi:10.1016/j.jcrysgro.2012.11.010
Shimada, K., Terai, Y., Takemoto, S., Hidaka, K., Fujiwara, Y., Suzuki, M., Tonouchi, M. (2008) Terahertz radiation from Er,O-codoped GaAs surface grown by organometallic vapor phase epitaxy. Applied Physics Letters, 92 (11). 111115pp. doi:10.1063/1.2901025
Terai, Y., Hidaka, K., Fujii, K., Takemoto, S., Tonouchi, M., Fujiwara, Y. (2008) Ultrafast carrier capturing in GaInP/Er,O-codoped GaAs/GaInP laser diodes grown by organometallic vapor phase epitaxy. Applied Physics Letters, 93 (23). 231117pp. doi:10.1063/1.3046784
Yoshitake, T., Inokuchi, Y., Yuri, A., Nagayama, K. (2006) Direct epitaxial growth of semiconducting β-FeSi2 thin films on Si(111) by facing targets direct-current sputtering. Applied Physics Letters, 88 (18). 182104pp. doi:10.1063/1.2200153
Fujiwara, K., Nishikawa, Y., Tokuda, Y., Nakayama, T. (1986) Effects of substrate preparation conditions on GaAs oval defects grown by molecular beam epitaxy. Applied Physics Letters, 48 (11). 701-703 doi:10.1063/1.96748
Agawa, K., Hirakawa, K., Sakamoto, N., Hashimoto, Y., Ikoma, T. (1994) Electrical properties of heavily Si‐doped (311)AGaAs grown by molecular beam epitaxy. Applied Physics Letters, 65 (9). 1171-1173 doi:10.1063/1.112136
 
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