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Turala, Artur, Regreny, Philippe, Rojo-Romeo, Pedro, Gendry, Michel (2009) Localized growth of InAs quantum dots on nanopatterned InP(001) substrates. Applied Physics Letters, 94 (5). 51109pp. doi:10.1063/1.3078275

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Reference TypeJournal (article/letter/editorial)
TitleLocalized growth of InAs quantum dots on nanopatterned InP(001) substrates
JournalApplied Physics Letters
AuthorsTurala, ArturAuthor
Regreny, PhilippeAuthor
Rojo-Romeo, PedroAuthor
Gendry, MichelAuthor
Year2009 (February 2)Volume94
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.3078275Search in ResearchGate
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Mindat Ref. ID8575897Long-form Identifiermindat:1:5:8575897:7
GUID0
Full ReferenceTurala, Artur, Regreny, Philippe, Rojo-Romeo, Pedro, Gendry, Michel (2009) Localized growth of InAs quantum dots on nanopatterned InP(001) substrates. Applied Physics Letters, 94 (5). 51109pp. doi:10.1063/1.3078275
Plain TextTurala, Artur, Regreny, Philippe, Rojo-Romeo, Pedro, Gendry, Michel (2009) Localized growth of InAs quantum dots on nanopatterned InP(001) substrates. Applied Physics Letters, 94 (5). 51109pp. doi:10.1063/1.3078275
In(2009, February) Applied Physics Letters Vol. 94 (5) AIP Publishing

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Kubota, Ryosuke, Saiki, Toshiharu, Regreny, Philippe, Benamrouche, Aziz, Gendry, Michel (2010) Low-Density InAs Quantum Dots Grown on InP(001) Using Solid-Source Molecular Beam Epitaxy with a Post-Growth Annealing Process. Japanese Journal of Applied Physics, 49 (4) 41201 doi:10.1143/jjap.49.041201
Salem, B., Aimez, V., Morris, D., Turala, A., Regreny, P., Gendry, M. (2005) Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing. Applied Physics Letters, 87 (24). 241115pp. doi:10.1063/1.2142330
Dupuy, E., Regreny, P., Robach, Y., Gendry, M., Chauvin, N., Tranvouez, E., Bremond, G., Bru-Chevallier, C., Patriarche, G. (2006) Low density of self-assembled InAs quantum dots grown by solid-source molecular beam epitaxy on InP(001). Applied Physics Letters, 89 (12). 123112pp. doi:10.1063/1.2354010
Bierwagen, O., Masselink, W. T. (2005) Self-organized growth of InAs quantum wires and dots on InP(001): The role of vicinal substrates. Applied Physics Letters, 86 (11). 113110pp. doi:10.1063/1.1884762
Naji, K., Saint-Girons, G., Penuelas, J., Patriarche, G., Largeau, L., Dumont, H., Rojo-Romeo, P., Gendry, M. (2013) Influence of catalyst droplet diameter on the growth direction of InP nanowires grown on Si(001) substrate. Applied Physics Letters, 102 (24). 243113pp. doi:10.1063/1.4811782
Hadj Alouane, M. H., Ilahi, B., Maaref, H., Salem, B., Aimez, V., Morris, D., Turala, A., Regreny, P., Gendry, M. (2010) Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes. Journal of Applied Physics, 108 (2). 24317pp. doi:10.1063/1.3460646
Chouaib, H., Chauvin, N., Bru-Chevallier, C., Monat, C., Regreny, P., Gendry, M. (2006) Photoreflectance spectroscopy of self-organized InAs/InP(001) quantum sticks emitting at 1.55μm. Applied Surface Science, 253. 90-94 doi:10.1016/j.apsusc.2006.05.081
Jaffal, Ali, Regreny, Philippe, Patriarche, Gilles, Gendry, Michel, Chauvin, Nicolas (2021) Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoring. Nanoscale, 13 (40) 16952-16958 doi:10.1039/d1nr04263g
Takahashi, Motoki, Syafawati Humam, Nurrul, Tsumori, Nobuhiro, Saiki, Toshiharu, Regreny, Philippe, Gendry, Michel (2013) Local control of emission energy of semiconductor quantum dots using volume expansion of a phase-change material. Applied Physics Letters, 102 (9). 93120pp. doi:10.1063/1.4795291
Hocevar, Moïra, Regreny, Philippe, Descamps, Armel, Albertini, David, Saint-Girons, Guillaume, Souifi, Abdelkader, Gendry, Michel, Patriarche, Gilles (2007) InAs nanocrystals on SiO2∕Si by molecular beam epitaxy for memory applications. Applied Physics Letters, 91 (13). 133114pp. doi:10.1063/1.2793694
Weber, A., Gauthier-Lafaye, O., Julien, F. H., Brault, J., Gendry, M., Désieres, Y., Benyattou, T. (1999) Strong normal-incidence infrared absorption in self-organized InAs/InAlAs quantum dots grown on InP(001). Applied Physics Letters, 74 (3). 413-415 doi:10.1063/1.123045
 
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