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Bayram, C., Péré-laperne, N., Razeghi, M. (2009) Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition. Applied Physics Letters, 95 (20). 201906pp. doi:10.1063/1.3267101

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Reference TypeJournal (article/letter/editorial)
TitleEffects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition
JournalApplied Physics Letters
AuthorsBayram, C.Author
Péré-laperne, N.Author
Razeghi, M.Author
Year2009 (November 16)Volume95
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3267101Search in ResearchGate
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Mindat Ref. ID8579377Long-form Identifiermindat:1:5:8579377:6
GUID0
Full ReferenceBayram, C., Péré-laperne, N., Razeghi, M. (2009) Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition. Applied Physics Letters, 95 (20). 201906pp. doi:10.1063/1.3267101
Plain TextBayram, C., Péré-laperne, N., Razeghi, M. (2009) Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition. Applied Physics Letters, 95 (20). 201906pp. doi:10.1063/1.3267101
In(2009, November) Applied Physics Letters Vol. 95 (20) AIP Publishing

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Bayram, C., Péré-laperne, N., McClintock, R., Fain, B., Razeghi, M. (2009) Pulsed metal-organic chemical vapor deposition of high-quality AlN/GaN superlattices for near-infrared intersubband transitions. Applied Physics Letters, 94 (12). 121902pp. doi:10.1063/1.3104857
Péré-Laperne, N., Bayram, C., Nguyen-Thê, L., McClintock, R., Razeghi, M. (2009) Tunability of intersubband absorption from 4.5 to 5.3 μm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition. Applied Physics Letters, 95 (13). 131109pp. doi:10.1063/1.3242027
Bayram, C., Vashaei, Z., Razeghi, M. (2010) AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition. Applied Physics Letters, 96 (4). 42103pp. doi:10.1063/1.3294633
Omnes, F., Razeghi, M. (1991) Optical investigations of GaAs‐GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition. Applied Physics Letters, 59 (9). 1034-1036 doi:10.1063/1.106336
Vashaei, Z., Bayram, C., Lavenus, P., Razeghi, M. (2010) Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices. Applied Physics Letters, 97 (12). 121918pp. doi:10.1063/1.3493185
Raghavan, Srinivasan, Redwing, Joan M. (2005) Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers. Journal of Applied Physics, 98 (2). 23514pp. doi:10.1063/1.1978991
Xue, JunShuai, Zhang, JinCheng, Hao, Yue (2015) Ultrathin barrier AlN/GaN high electron mobility transistors grown at a dramatically reduced growth temperature by pulsed metal organic chemical vapor deposition. Applied Physics Letters, 107 (4). 43503pp. doi:10.1063/1.4927743
Razeghi, M., Duchemin, J. P., Portal, J. C. (1985) Two‐dimensional electron gases in quantum well and superlattices of Ga0.25In0.75As0.50P0.50/InP heterostructures grown by low pressure metalorganic chemical vapor deposition. Applied Physics Letters, 46 (1). 46-48 doi:10.1063/1.95846
Vashaei, Z., Cicek, E., Bayram, C., McClintock, R., Razeghi, M. (2010) GaN avalanche photodiodes grown on m-plane freestanding GaN substrate. Applied Physics Letters, 96 (20). 201908pp. doi:10.1063/1.3432408
Gherasimova, M., Cui, G., Ren, Z., Su, J., Wang, X.-L., Han, J., Higashimine, K., Otsuka, N. (2004) Heteroepitaxial evolution of AlN on GaN Grown by metal-organic chemical vapor deposition. Journal of Applied Physics, 95 (5). 2921-2923 doi:10.1063/1.1644036
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