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Zhang, Yuanyuan, Ma, Xiangyang, Chen, Peiliang, Li, Dongsheng, Pi, Xiaodong, Yang, Deren, Coleman, P. G. (2009) Enhancement of electroluminescence from TiO2/p+-Si heterostructure-based devices through engineering of oxygen vacancies in TiO2. Applied Physics Letters, 95 (25). 252102pp. doi:10.1063/1.3276547

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Reference TypeJournal (article/letter/editorial)
TitleEnhancement of electroluminescence from TiO2/p+-Si heterostructure-based devices through engineering of oxygen vacancies in TiO2
JournalApplied Physics Letters
AuthorsZhang, YuanyuanAuthor
Ma, XiangyangAuthor
Chen, PeiliangAuthor
Li, DongshengAuthor
Pi, XiaodongAuthor
Yang, DerenAuthor
Coleman, P. G.Author
Year2009 (December 21)Volume95
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3276547Search in ResearchGate
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Mindat Ref. ID8580168Long-form Identifiermindat:1:5:8580168:6
GUID0
Full ReferenceZhang, Yuanyuan, Ma, Xiangyang, Chen, Peiliang, Li, Dongsheng, Pi, Xiaodong, Yang, Deren, Coleman, P. G. (2009) Enhancement of electroluminescence from TiO2/p+-Si heterostructure-based devices through engineering of oxygen vacancies in TiO2. Applied Physics Letters, 95 (25). 252102pp. doi:10.1063/1.3276547
Plain TextZhang, Yuanyuan, Ma, Xiangyang, Chen, Peiliang, Li, Dongsheng, Pi, Xiaodong, Yang, Deren, Coleman, P. G. (2009) Enhancement of electroluminescence from TiO2/p+-Si heterostructure-based devices through engineering of oxygen vacancies in TiO2. Applied Physics Letters, 95 (25). 252102pp. doi:10.1063/1.3276547
In(2009, December) Applied Physics Letters Vol. 95 (25) AIP Publishing

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