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Choi, Ji-Hyuk, Das, Sachindra Nath, Myoung, Jae-Min (2009) Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications. Applied Physics Letters, 95 (6). 62105pp. doi:10.1063/1.3204450

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Reference TypeJournal (article/letter/editorial)
TitleControllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications
JournalApplied Physics Letters
AuthorsChoi, Ji-HyukAuthor
Das, Sachindra NathAuthor
Myoung, Jae-MinAuthor
Year2009 (August 10)Volume95
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.3204450Search in ResearchGate
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Mindat Ref. ID8581007Long-form Identifiermindat:1:5:8581007:3
GUID0
Full ReferenceChoi, Ji-Hyuk, Das, Sachindra Nath, Myoung, Jae-Min (2009) Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications. Applied Physics Letters, 95 (6). 62105pp. doi:10.1063/1.3204450
Plain TextChoi, Ji-Hyuk, Das, Sachindra Nath, Myoung, Jae-Min (2009) Controllable resistance switching behavior of NiO/SiO2 double layers for nonvolatile memory applications. Applied Physics Letters, 95 (6). 62105pp. doi:10.1063/1.3204450
In(2009, August) Applied Physics Letters Vol. 95 (6) AIP Publishing

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