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Koren, E., Rosenwaks, Y., Allen, J. E., Hemesath, E. R., Lauhon, L. J. (2009) Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy. Applied Physics Letters, 95 (9). 92105pp. doi:10.1063/1.3207887

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Reference TypeJournal (article/letter/editorial)
TitleNonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy
JournalApplied Physics Letters
AuthorsKoren, E.Author
Rosenwaks, Y.Author
Allen, J. E.Author
Hemesath, E. R.Author
Lauhon, L. J.Author
Year2009 (August 31)Volume95
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3207887Search in ResearchGate
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Mindat Ref. ID8581472Long-form Identifiermindat:1:5:8581472:3
GUID0
Full ReferenceKoren, E., Rosenwaks, Y., Allen, J. E., Hemesath, E. R., Lauhon, L. J. (2009) Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy. Applied Physics Letters, 95 (9). 92105pp. doi:10.1063/1.3207887
Plain TextKoren, E., Rosenwaks, Y., Allen, J. E., Hemesath, E. R., Lauhon, L. J. (2009) Nonuniform doping distribution along silicon nanowires measured by Kelvin probe force microscopy and scanning photocurrent microscopy. Applied Physics Letters, 95 (9). 92105pp. doi:10.1063/1.3207887
In(2009, August) Applied Physics Letters Vol. 95 (9) AIP Publishing

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Allen, Jonathan E., Perea, Daniel E., Hemesath, Eric R., Lauhon, Lincoln J. (2009) Nonuniform Nanowire Doping Profiles Revealed by Quantitative Scanning Photocurrent Microscopy. Advanced Materials, 21. 3067-3072 doi:10.1002/adma.200803865
Koren, E., Berkovitch, N., Azriel, O., Boag, A., Rosenwaks, Y., Hemesath, E. R., Lauhon, L. J. (2011) Direct measurement of nanowire Schottky junction depletion region. Applied Physics Letters, 99 (22). 223511pp. doi:10.1063/1.3665182
Gu, Y., Kwak, E.-S., Lensch, J. L., Allen, J. E., Odom, T. W., Lauhon, L. J. (2005) Near-field scanning photocurrent microscopy of a nanowire photodetector. Applied Physics Letters, 87 (4). 43111pp. doi:10.1063/1.1996851
Schlitz, Ruth A., Perea, Daniel E., Lensch-Falk, Jessica L., Hemesath, Eric R., Lauhon, Lincoln J. (2009) Correlating dopant distributions and electrical properties of boron-doped silicon nanowires. Applied Physics Letters, 95 (16). 162101pp. doi:10.1063/1.3250431
Volotsenko, I., Molotskii, M., Barkay, Z., Marczewski, J., Grabiec, P., Jaroszewicz, B., Meshulam, G., Grunbaum, E., Rosenwaks, Y. (2010) Secondary electron doping contrast: Theory based on scanning electron microscope and Kelvin probe force microscopy measurements. Journal of Applied Physics, 107 (1). 14510pp. doi:10.1063/1.3276090
Chou, J. Y., Lensch-Falk, J. L., Hemesath, E. R., Lauhon, L. J. (2009) Vanadium oxide nanowire phase and orientation analyzed by Raman spectroscopy. Journal of Applied Physics, 105 (3). 34310pp. doi:10.1063/1.3075763
Schwarzman, A., Grunbaum, E., Strassburg, E., Lepkifker, E., Boag, A., Rosenwaks, Y., Glatzel, Th., Barkay, Z., Mazzer, M., Barnham, K. (2005) Nanoscale potential distribution across multiquantum well structures: Kelvin probe force microscopy and secondary electron imaging. Journal of Applied Physics, 98 (8). 84310pp. doi:10.1063/1.2106011
Wu, J, Xie, S, Hemesath, E, Lauhon, L, Dravid, VP (2010) 3D Complete-Tilt Electron Tomography of Semiconductor Nanowires. Microscopy and Microanalysis, 16. 1876-1877 doi:10.1017/s1431927610057302
Meoded, T., Shikler, R., Fried, N., Rosenwaks, Y. (1999) Direct measurement of minority carriers diffusion length using Kelvin probe force microscopy. Applied Physics Letters, 75 (16). 2435-2437 doi:10.1063/1.125039
Buh, G. H., Chung, H. J., Kim, C. K., Yi, J. H., Yoon, I. T., Kuk, Y. (2000) Imaging of a silicon pn junction under applied bias with scanning capacitance microscopy and Kelvin probe force microscopy. Applied Physics Letters, 77 (1). 106-108 doi:10.1063/1.126892
Teague, L. C., Loth, M. A., Anthony, J. E. (2012) Influence of film structure and light on charge trapping and dissipation dynamics in spun-cast organic thin-film transistors measured by scanning Kelvin probe microscopy. Applied Physics Letters, 100 (26). 263305pp. doi:10.1063/1.4720063
 
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