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Yang, M., Chen, T. P., Ding, L., Liu, Y., Zhu, F. R., Fung, S. (2009) Capacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination. Applied Physics Letters, 95 (9). 91111pp. doi:10.1063/1.3224191

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Reference TypeJournal (article/letter/editorial)
TitleCapacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination
JournalApplied Physics Letters
AuthorsYang, M.Author
Chen, T. P.Author
Ding, L.Author
Liu, Y.Author
Zhu, F. R.Author
Fung, S.Author
Year2009 (August 31)Volume95
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3224191Search in ResearchGate
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Mindat Ref. ID8581608Long-form Identifiermindat:1:5:8581608:6
GUID0
Full ReferenceYang, M., Chen, T. P., Ding, L., Liu, Y., Zhu, F. R., Fung, S. (2009) Capacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination. Applied Physics Letters, 95 (9). 91111pp. doi:10.1063/1.3224191
Plain TextYang, M., Chen, T. P., Ding, L., Liu, Y., Zhu, F. R., Fung, S. (2009) Capacitance switching in SiO2 thin film embedded with Ge nanocrystals caused by ultraviolet illumination. Applied Physics Letters, 95 (9). 91111pp. doi:10.1063/1.3224191
In(2009, August) Applied Physics Letters Vol. 95 (9) AIP Publishing


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