Vote for your favorite mineral in #MinCup25! - Dioptase vs. Wavellite
It's a green, green world for kiwi #wavellite vs desert emerald #dioptase.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Lin, Wei, Li, Shuping, Kang, Junyong (2010) Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy. Applied Physics Letters, 96 (10). 101115pp. doi:10.1063/1.3360199

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleNear-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsLin, WeiAuthor
Li, ShupingAuthor
Kang, JunyongAuthor
Year2010 (March 8)Volume96
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.3360199Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8581968Long-form Identifiermindat:1:5:8581968:5
GUID0
Full ReferenceLin, Wei, Li, Shuping, Kang, Junyong (2010) Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy. Applied Physics Letters, 96 (10). 101115pp. doi:10.1063/1.3360199
Plain TextLin, Wei, Li, Shuping, Kang, Junyong (2010) Near-ultraviolet light emitting diodes using strained ultrathin InN/GaN quantum well grown by metal organic vapor phase epitaxy. Applied Physics Letters, 96 (10). 101115pp. doi:10.1063/1.3360199
In(2010, March) Applied Physics Letters Vol. 96 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Qi, Y. D., Liang, H., Wang, D., Lu, Z. D., Tang, W., Lau, K. M. (2005) Comparison of blue and green InGaN∕GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 86 (10). 101903pp. doi:10.1063/1.1866634
Wang, Xiuhua, Chen, Shanshan, Lin, Wei, Li, Shuping, Chen, Hangyang, Liu, Dayi, Kang, Junyong (2011) Structural properties of InN films grown in different conditions by metalorganic vapor phase epitaxy. Journal of Materials Research, 26 (6) 775-780 doi:10.1557/jmr.2010.87
Grandjean, N., Massies, J., Leroux, M., Lorenzini, P. (1998) Ultraviolet GaN light-emitting diodes grown by molecular beam epitaxy using NH3. Applied Physics Letters, 72 (1). 82-84 doi:10.1063/1.120651
Nishikawa, A., Furukawa, N., Kawasaki, T., Terai, Y., Fujiwara, Y. (2010) Improved luminescence properties of Eu-doped GaN light-emitting diodes grown by atmospheric-pressure organometallic vapor phase epitaxy. Applied Physics Letters, 97 (5). 51113pp. doi:10.1063/1.3478011
Tran, Chuong A., Osinski, A., Karlicek, R. F., Berishev, I. (1999) Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Applied Physics Letters, 75 (11). 1494-1496 doi:10.1063/1.124733
Liu, Songqing, Ye, Chunya, Cai, Xuefen, Li, Shuping, Lin, Wei, Kang, Junyong (2016) Performance enhancement of AlGaN deep-ultraviolet light-emitting diodes with varied superlattice barrier electron blocking layer. Applied Physics A, 122. doi:10.1007/s00339-016-0073-0
Grandjean, N., Massies, J., Dalmasso, S., Vennéguès, P., Siozade, L., Hirsch, L. (1999) GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy. Applied Physics Letters, 74 (24). 3616-3618 doi:10.1063/1.123199
Ramaiah, K. S., Su, Y. K., Chang, S. J., Kerr, B., Liu, H. P., Chen, I. G. (2004) Characterization of InGaN/GaN multi-quantum-well blue-light-emitting diodes grown by metal organic chemical vapor deposition. Applied Physics Letters, 84 (17). 3307-3309 doi:10.1063/1.1728302
Sato, Tadashige, Imai, Megumi (2002) Nitrogen-doped GaAsP light-emitting diodes with junctions grown by hydride vapor-phase epitaxy. Applied Physics Letters, 80 (16). 2875-2877 doi:10.1063/1.1473693
Bayram, C., Vashaei, Z., Razeghi, M. (2010) AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition. Applied Physics Letters, 96 (4). 42103pp. doi:10.1063/1.3294633
Schulze, F., Dadgar, A., Bläsing, J., Diez, A., Krost, A. (2006) Metalorganic vapor phase epitaxy grown InGaN∕GaN light-emitting diodes on Si(001) substrate. Applied Physics Letters, 88 (12). 121114pp. doi:10.1063/1.2188383
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 10, 2025 07:42:47
Go to top of page