Frenzel, H., Schein, F., Lajn, A., von Wenckstern, H., Grundmann, M. (2010) High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology. Applied Physics Letters, 96 (11). 113502pp. doi:10.1063/1.3339876
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology | ||
| Journal | Applied Physics Letters | ||
| Authors | Frenzel, H. | Author | |
| Schein, F. | Author | ||
| Lajn, A. | Author | ||
| von Wenckstern, H. | Author | ||
| Grundmann, M. | Author | ||
| Year | 2010 (March 15) | Volume | 96 |
| Issue | 11 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3339876Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8582002 | Long-form Identifier | mindat:1:5:8582002:5 |
| GUID | 0 | ||
| Full Reference | Frenzel, H., Schein, F., Lajn, A., von Wenckstern, H., Grundmann, M. (2010) High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology. Applied Physics Letters, 96 (11). 113502pp. doi:10.1063/1.3339876 | ||
| Plain Text | Frenzel, H., Schein, F., Lajn, A., von Wenckstern, H., Grundmann, M. (2010) High-gain integrated inverters based on ZnO metal-semiconductor field-effect transistor technology. Applied Physics Letters, 96 (11). 113502pp. doi:10.1063/1.3339876 | ||
| In | (2010, March) Applied Physics Letters Vol. 96 (11) AIP Publishing | ||
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