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Dhalluin, F., Baron, T., Ferret, P., Salem, B., Gentile, P., Harmand, J.-C. (2010) Silicon nanowires: Diameter dependence of growth rate and delay in growth. Applied Physics Letters, 96 (13). 133109pp. doi:10.1063/1.3373546

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Reference TypeJournal (article/letter/editorial)
TitleSilicon nanowires: Diameter dependence of growth rate and delay in growth
JournalApplied Physics Letters
AuthorsDhalluin, F.Author
Baron, T.Author
Ferret, P.Author
Salem, B.Author
Gentile, P.Author
Harmand, J.-C.Author
Year2010 (March 29)Volume96
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3373546Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8582386Long-form Identifiermindat:1:5:8582386:4
GUID0
Full ReferenceDhalluin, F., Baron, T., Ferret, P., Salem, B., Gentile, P., Harmand, J.-C. (2010) Silicon nanowires: Diameter dependence of growth rate and delay in growth. Applied Physics Letters, 96 (13). 133109pp. doi:10.1063/1.3373546
Plain TextDhalluin, F., Baron, T., Ferret, P., Salem, B., Gentile, P., Harmand, J.-C. (2010) Silicon nanowires: Diameter dependence of growth rate and delay in growth. Applied Physics Letters, 96 (13). 133109pp. doi:10.1063/1.3373546
In(2010, March) Applied Physics Letters Vol. 96 (13) AIP Publishing

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Baron, T., Gordon, M., Dhalluin, F., Ternon, C., Ferret, P., Gentile, P. (2006) Si nanowire growth and characterization using a microelectronics-compatible catalyst: PtSi. Applied Physics Letters, 89 (23). 233111pp. doi:10.1063/1.2402118
Noé, P., Guignard, J., Gentile, P., Delamadeleine, E., Calvo, V., Ferret, P., Dhalluin, F., Baron, T. (2007) Enhancement of the photoluminescence of silicon oxide defect states by combining silicon oxide with silicon nanowires. Journal of Applied Physics, 102 (1). 16103pp. doi:10.1063/1.2751488
Dhalluin, Florian, Desré, Pierre J., den Hertog, Martien I., Rouvière, Jean-Luc, Ferret, Pierre, Gentile, Pascal, Baron, Thierry (2007) Critical condition for growth of silicon nanowires. Journal of Applied Physics, 102 (9). 94906pp. doi:10.1063/1.2811935
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Rosaz, G., Salem, B., Pauc, N., Potié, A., Gentile, P., Baron, T. (2011) Vertically integrated silicon-germanium nanowire field-effect transistor. Applied Physics Letters, 99 (19). 193107pp. doi:10.1063/1.3660244
Demichel, O., Oehler, F., Noé, P., Calvo, V., Pauc, N., Gentile, P., Baron, T., Peyrade, D., Magnea, N. (2008) Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires. Applied Physics Letters, 93 (21). 213104pp. doi:10.1063/1.3021359
Buttard, D., David, T., Gentile, P., Hertog, M. Den, Baron, T., Ferret, P., Rouvière, J. L. (2008) A new architecture for self-organized silicon nanowire growth integrated on a 〈100〉 silicon substrate. physica status solidi (a), 205 (7). 1606-1614 doi:10.1002/pssa.200723522
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Knebl, G. M., Gessler, J. R., Kamp, M., Höfling, S. (2014) Molecular beam epitaxial growth of Bi2Se3 nanowires and nanoflakes. Applied Physics Letters, 105 (13). 133109pp. doi:10.1063/1.4896966
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