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Schubert, Martin F., Schubert, E. Fred (2010) Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells. Applied Physics Letters, 96 (13). 131102pp. doi:10.1063/1.3373610

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Reference TypeJournal (article/letter/editorial)
TitleEffect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells
JournalApplied Physics Letters
AuthorsSchubert, Martin F.Author
Schubert, E. FredAuthor
Year2010 (March 29)Volume96
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3373610Search in ResearchGate
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Mindat Ref. ID8582389Long-form Identifiermindat:1:5:8582389:1
GUID0
Full ReferenceSchubert, Martin F., Schubert, E. Fred (2010) Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells. Applied Physics Letters, 96 (13). 131102pp. doi:10.1063/1.3373610
Plain TextSchubert, Martin F., Schubert, E. Fred (2010) Effect of heterointerface polarization charges and well width upon capture and dwell time for electrons and holes above GaInN/GaN quantum wells. Applied Physics Letters, 96 (13). 131102pp. doi:10.1063/1.3373610
In(2010, March) Applied Physics Letters Vol. 96 (13) AIP Publishing

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Schubert, Martin F., Xu, Jiuru, Dai, Qi, Mont, Frank W., Kim, Jong Kyu, Schubert, E. Fred (2009) On resonant optical excitation and carrier escape in GaInN/GaN quantum wells. Applied Physics Letters, 94 (8). 81114pp. doi:10.1063/1.3089691
Noemaun, Ahmed N., Schubert, Martin F., Cho, Jaehee, Schubert, E. Fred, Crawford, Mary H., Koleske, Daniel D. (2010) Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping. Applied Physics Letters, 96 (12). 121110pp. doi:10.1063/1.3371812
Schubert, Martin F., Chhajed, Sameer, Kim, Jong Kyu, Fred Schubert, E., Cho, Jaehee (2007) Polarization of light emission by 460nm GaInN∕GaN light-emitting diodes grown on (0001) oriented sapphire substrates. Applied Physics Letters, 91 (5). 51117pp. doi:10.1063/1.2757594
Schubert, Martin F., Dai, Qi, Xu, Jiuru, Kim, Jong Kyu, Schubert, E. Fred (2009) Electroluminescence induced by photoluminescence excitation in GaInN/GaN light-emitting diodes. Applied Physics Letters, 95 (19). 191105pp. doi:10.1063/1.3258488
Schubert, Martin F., Xu, Jiuru, Kim, Jong Kyu, Schubert, E. Fred, Kim, Min Ho, Yoon, Sukho, Lee, Soo Min, Sone, Cheolsoo, Sakong, Tan, Park, Yongjo (2008) Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop. Applied Physics Letters, 93 (4). 41102pp. doi:10.1063/1.2963029
Xu, Jiuru, Schubert, Martin F., Zhu, Di, Cho, Jaehee, Schubert, E. Fred, Shim, Hyunwook, Sone, Cheolsoo (2011) Effects of polarization-field tuning in GaInN light-emitting diodes. Applied Physics Letters, 99 (4). 41105pp. doi:10.1063/1.3609783
Xu, Jiuru, Schubert, Martin F., Noemaun, Ahmed N., Zhu, Di, Kim, Jong Kyu, Schubert, E. Fred, Kim, Min Ho, Chung, Hun Jae, Yoon, Sukho, Sone, Cheolsoo, Park, Yongjo (2009) Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes. Applied Physics Letters, 94 (1). 11113pp. doi:10.1063/1.3058687
Schubert, Martin F., Chhajed, Sameer, Kim, Jong Kyu, Schubert, E. Fred, Koleske, Daniel D., Crawford, Mary H., Lee, Stephen R., Fischer, Arthur J., Thaler, Gerald, Banas, Michael A. (2007) Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes. Applied Physics Letters, 91 (23). 231114pp. doi:10.1063/1.2822442
Schubert, Martin F. (2010) Interband tunnel junctions for wurtzite III-nitride semiconductors based on heterointerface polarization charges. Physical Review B, 81 (3) doi:10.1103/physrevb.81.035303
Lee, Wonseok, Kim, Min-Ho, Zhu, Di, Noemaun, Ahmed N., Kim, Jong Kyu, Schubert, E. F. (2010) Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes. Journal of Applied Physics, 107 (6). 63102pp. doi:10.1063/1.3327425
Dai, Q., Schubert, M. F., Kim, M. H., Kim, J. K., Schubert, E. F., Koleske, D. D., Crawford, M. H., Lee, S. R., Fischer, A. J., Thaler, G., Banas, M. A. (2009) Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities. Applied Physics Letters, 94 (11). 111109pp. doi:10.1063/1.3100773
 
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