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Ando, Takashi, Copel, Matt, Bruley, John, Frank, Martin M., Watanabe, Heiji, Narayanan, Vijay (2010) Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles. Applied Physics Letters, 96 (13). 132904pp. doi:10.1063/1.3373914

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Reference TypeJournal (article/letter/editorial)
TitlePhysical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles
JournalApplied Physics Letters
AuthorsAndo, TakashiAuthor
Copel, MattAuthor
Bruley, JohnAuthor
Frank, Martin M.Author
Watanabe, HeijiAuthor
Narayanan, VijayAuthor
Year2010 (March 29)Volume96
Issue13
PublisherAIP Publishing
DOIdoi:10.1063/1.3373914Search in ResearchGate
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Mindat Ref. ID8582403Long-form Identifiermindat:1:5:8582403:0
GUID0
Full ReferenceAndo, Takashi, Copel, Matt, Bruley, John, Frank, Martin M., Watanabe, Heiji, Narayanan, Vijay (2010) Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles. Applied Physics Letters, 96 (13). 132904pp. doi:10.1063/1.3373914
Plain TextAndo, Takashi, Copel, Matt, Bruley, John, Frank, Martin M., Watanabe, Heiji, Narayanan, Vijay (2010) Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles. Applied Physics Letters, 96 (13). 132904pp. doi:10.1063/1.3373914
In(2010, March) Applied Physics Letters Vol. 96 (13) AIP Publishing

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Arimura, Hiroaki, Haight, Richard, Brown, Stephen L., Kellock, Andrew, Callegari, Alessandro, Copel, Matthew, Watanabe, Heiji, Narayanan, Vijay, Ando, Takashi (2010) Temperature-dependent La- and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy. Applied Physics Letters, 96 (13). 132902pp. doi:10.1063/1.3374883
Brown, Stephen L., Rossnagel, Stephen M., Bruley, John, Copel, Matthew, Hopstaken, Marco J. P., Narayanan, Vijay, Frank, Martin M. (2010) Oxygen migration in TiO2-based higher-k gate stacks. Journal of Applied Physics, 107 (5). 54102pp. doi:10.1063/1.3298454
Carr, Adra, Rozen, John, Frank, Martin M., Ando, Takashi, Cartier, Eduard A., Kerber, Pranita, Narayanan, Vijay, Haight, Richard (2015) Evolution of interfacial Fermi level in In0.53Ga0.47As/high-κ/TiN gate stacks. Applied Physics Letters, 107 (1). 12103pp. doi:10.1063/1.4923418
Copel, M. (2008) Reaction of barium oxide threshold voltage tuning layers with SiO2 and HfO2∕SiO2 gate dielectrics. Applied Physics Letters, 92 (15). 152909pp. doi:10.1063/1.2912533
Marchiori, C., Frank, M. M., Bruley, J., Narayanan, V., Fompeyrine, J. (2011) Epitaxial SrO interfacial layers for HfO2–Si gate stack scaling. Applied Physics Letters, 98 (5). 52908pp. doi:10.1063/1.3549202
Kobayashi, Takuma, Koyanagi, Kaho, Hirai, Hirohisa, Sometani, Mitsuru, Okamoto, Mitsuo, Watanabe, Heiji (2024) Gate stress-induced mobility degradation in NO-nitrided SiC(0001) MOSFETs. Applied Physics Letters, 125 (25). doi:10.1063/5.0245907
Copel, M., Guha, S., Bojarczuk, N., Cartier, E., Narayanan, V., Paruchuri, V. (2009) Interaction of La2O3 capping layers with HfO2 gate dielectrics. Applied Physics Letters, 95 (21). 212903pp. doi:10.1063/1.3268456
Rothschild, J. A., Avraham, H., Lipp, E., Eizenberg, M. (2010) Tunneling of holes observed at work function measurements of metal/HfO2/SiO2/n-Si gate stacks. Applied Physics Letters, 96 (12). 122102pp. doi:10.1063/1.3360879
Choi, Changhwan, Ando, Takashi, Narayanan, Vijay (2011) Ruthenium based metals using atomic vapor deposition for gate electrode applications. Applied Physics Letters, 98 (8). 83506pp. doi:10.1063/1.3559929
McDaniel, Martin D., Posadas, Agham, Ngo, Thong Q., Karako, Christine M., Bruley, John, Frank, Martin M., Narayanan, Vijay, Demkov, Alexander A., Ekerdt, John G. (2014) Incorporation of La in epitaxial SrTiO3 thin films grown by atomic layer deposition on SrTiO3-buffered Si (001) substrates. Journal of Applied Physics, 115 (22). 224108pp. doi:10.1063/1.4883767
Watanabe, Heiji, Ikarashi, Nobuyuki, Ito, Fuminori (2003) La–silicate gate dielectrics fabricated by solid phase reaction between La metal and SiO2 underlayers. Applied Physics Letters, 83 (17). 3546-3548 doi:10.1063/1.1622107
 
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