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Lee, K. H., Chang, P. C., Chang, S. J., Su, Y. K., Yu, C. L. (2010) AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures. Applied Physics Letters, 96 (21). 212105pp. doi:10.1063/1.3421392

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Reference TypeJournal (article/letter/editorial)
TitleAlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures
JournalApplied Physics Letters
AuthorsLee, K. H.Author
Chang, P. C.Author
Chang, S. J.Author
Su, Y. K.Author
Yu, C. L.Author
Year2010 (May 24)Volume96
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3421392Search in ResearchGate
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Mindat Ref. ID8583775Long-form Identifiermindat:1:5:8583775:1
GUID0
Full ReferenceLee, K. H., Chang, P. C., Chang, S. J., Su, Y. K., Yu, C. L. (2010) AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures. Applied Physics Letters, 96 (21). 212105pp. doi:10.1063/1.3421392
Plain TextLee, K. H., Chang, P. C., Chang, S. J., Su, Y. K., Yu, C. L. (2010) AlGaN/GaN high electron mobility transistors based on InGaN/GaN multiquantum-well structures. Applied Physics Letters, 96 (21). 212105pp. doi:10.1063/1.3421392
In(2010, May) Applied Physics Letters Vol. 96 (21) AIP Publishing

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