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Tedesco, J. L., Jernigan, G. G., Culbertson, J. C., Hite, J. K., Yang, Y., Daniels, K. M., Myers-Ward, R. L., Eddy, C. R., Robinson, J. A., Trumbull, K. A., Wetherington, M. T., Campbell, P. M., Gaskill, D. K. (2010) Morphology characterization of argon-mediated epitaxial graphene on C-face SiC. Applied Physics Letters, 96 (22). 222103pp. doi:10.1063/1.3442903

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Reference TypeJournal (article/letter/editorial)
TitleMorphology characterization of argon-mediated epitaxial graphene on C-face SiC
JournalApplied Physics Letters
AuthorsTedesco, J. L.Author
Jernigan, G. G.Author
Culbertson, J. C.Author
Hite, J. K.Author
Yang, Y.Author
Daniels, K. M.Author
Myers-Ward, R. L.Author
Eddy, C. R.Author
Robinson, J. A.Author
Trumbull, K. A.Author
Wetherington, M. T.Author
Campbell, P. M.Author
Gaskill, D. K.Author
Year2010 (May 31)Volume96
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.3442903Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584073Long-form Identifiermindat:1:5:8584073:7
GUID0
Full ReferenceTedesco, J. L., Jernigan, G. G., Culbertson, J. C., Hite, J. K., Yang, Y., Daniels, K. M., Myers-Ward, R. L., Eddy, C. R., Robinson, J. A., Trumbull, K. A., Wetherington, M. T., Campbell, P. M., Gaskill, D. K. (2010) Morphology characterization of argon-mediated epitaxial graphene on C-face SiC. Applied Physics Letters, 96 (22). 222103pp. doi:10.1063/1.3442903
Plain TextTedesco, J. L., Jernigan, G. G., Culbertson, J. C., Hite, J. K., Yang, Y., Daniels, K. M., Myers-Ward, R. L., Eddy, C. R., Robinson, J. A., Trumbull, K. A., Wetherington, M. T., Campbell, P. M., Gaskill, D. K. (2010) Morphology characterization of argon-mediated epitaxial graphene on C-face SiC. Applied Physics Letters, 96 (22). 222103pp. doi:10.1063/1.3442903
In(2010, May) Applied Physics Letters Vol. 96 (22) AIP Publishing

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