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Suezaki, T., Chen, J. I. L., Hatayama, T., Fuyuki, T., Ozin, G. A. (2010) Electrical properties of p-type and n-type doped inverse silicon opals - towards optically amplified silicon solar cells. Applied Physics Letters, 96 (24). 242102pp. doi:10.1063/1.3447374

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of p-type and n-type doped inverse silicon opals - towards optically amplified silicon solar cells
JournalApplied Physics Letters
AuthorsSuezaki, T.Author
Chen, J. I. L.Author
Hatayama, T.Author
Fuyuki, T.Author
Ozin, G. A.Author
Year2010 (June 14)Volume96
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3447374Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584344Long-form Identifiermindat:1:5:8584344:2
GUID0
Full ReferenceSuezaki, T., Chen, J. I. L., Hatayama, T., Fuyuki, T., Ozin, G. A. (2010) Electrical properties of p-type and n-type doped inverse silicon opals - towards optically amplified silicon solar cells. Applied Physics Letters, 96 (24). 242102pp. doi:10.1063/1.3447374
Plain TextSuezaki, T., Chen, J. I. L., Hatayama, T., Fuyuki, T., Ozin, G. A. (2010) Electrical properties of p-type and n-type doped inverse silicon opals - towards optically amplified silicon solar cells. Applied Physics Letters, 96 (24). 242102pp. doi:10.1063/1.3447374
In(2010, June) Applied Physics Letters Vol. 96 (24) AIP Publishing

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Suezaki, Takashi, Yano, Hiroshi, Hatayama, Tomoaki, Ozin, Geoffrey A., Fuyuki, Takashi (2011) Photoconductivity in inverse silicon opals enhanced by slow photon effect: Yet another step towards optically amplified silicon photonic crystal solar cells. Applied Physics Letters, 98 (7). 72106pp. doi:10.1063/1.3555338
Suezaki, Takashi, O'Brien, Paul G., Chen, Jennifer I. L., Loso, Edward, Kherani, Nazir P., Ozin, Geoffrey A. (2009) Tailoring the Electrical Properties of Inverse Silicon Opals - A Step Towards Optically Amplified Silicon Solar Cells. Advanced Materials, 21. 559-563 doi:10.1002/adma.200802123
Cuony, P., Marending, M., Alexander, D. T. L., Boccard, M., Bugnon, G., Despeisse, M., Ballif, C. (2010) Mixed-phase p-type silicon oxide containing silicon nanocrystals and its role in thin-film silicon solar cells. Applied Physics Letters, 97 (21). 213502pp. doi:10.1063/1.3517492
Zhao, Jianhua, Wang, Aihua (2006) Rear emitter n-type passivated emitter, rear totally diffused silicon solar cell Structure. Applied Physics Letters, 88 (24). 242102pp. doi:10.1063/1.2213927
Mattey, N. L., Dowsett, M. G., Parker, E. H. C., Whall, T. E., Taylor, S., Zhang, J. F. (1990) p‐type delta‐doped layers in silicon: Structural and electronic properties. Applied Physics Letters, 57 (16). 1648-1650 doi:10.1063/1.104076
Tarr, N. G., Pulfrey, D. L., Iles, P. A. (1981) Induced back‐surface field solar cells onp‐type silicon substrates. Applied Physics Letters, 39 (1). 83-85 doi:10.1063/1.92525
Schutz-Kuchly, T., Veirman, J., Dubois, S., Heslinga, D. R. (2010) Light-Induced-Degradation effects in boron–phosphorus compensated n-type Czochralski silicon. Applied Physics Letters, 96 (9). 93505pp. doi:10.1063/1.3334724
Li, J., Oder, T. N., Nakarmi, M. L., Lin, J. Y., Jiang, H. X. (2002) Optical and electrical properties of Mg-doped p-type AlxGa1−xN. Applied Physics Letters, 80 (7). 1210-1212 doi:10.1063/1.1450038
Becker, C., Linden, S., von Freymann, G., Wegener, M., TĂ©treault, N., Vekris, E., Kitaev, V., Ozin, G. A. (2005) Two-color pump–probe experiments on silicon inverse opals. Applied Physics Letters, 87 (9). 91111pp. doi:10.1063/1.2035873
Lee, Chang Hyun, Lim, Koeng Su (1998) Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells. Applied Physics Letters, 72 (1). 106-108 doi:10.1063/1.120659
Coletti, G., Kvande, R., Mihailetchi, V. D., Geerligs, L. J., Arnberg, L., Øvrelid, E. J. (2008) Effect of iron in silicon feedstock on p- and n-type multicrystalline silicon solar cells. Journal of Applied Physics, 104 (10). 104913pp. doi:10.1063/1.3021355
 
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