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Zhao, Yi, Kita, Koji, Toriumi, Akira (2010) Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices. Applied Physics Letters, 96 (24). 242901pp. doi:10.1063/1.3455110

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Reference TypeJournal (article/letter/editorial)
TitleThermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices
JournalApplied Physics Letters
AuthorsZhao, YiAuthor
Kita, KojiAuthor
Toriumi, AkiraAuthor
Year2010 (June 14)Volume96
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3455110Search in ResearchGate
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Mindat Ref. ID8584449Long-form Identifiermindat:1:5:8584449:6
GUID0
Full ReferenceZhao, Yi, Kita, Koji, Toriumi, Akira (2010) Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices. Applied Physics Letters, 96 (24). 242901pp. doi:10.1063/1.3455110
Plain TextZhao, Yi, Kita, Koji, Toriumi, Akira (2010) Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices. Applied Physics Letters, 96 (24). 242901pp. doi:10.1063/1.3455110
In(2010, June) Applied Physics Letters Vol. 96 (24) AIP Publishing

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Kita, Koji, Toriumi, Akira (2009) Origin of electric dipoles formed at high-k/SiO2 interface. Applied Physics Letters, 94 (13). 132902pp. doi:10.1063/1.3110968
Swaminathan, Shankar, Shandalov, Michael, Oshima, Yasuhiro, McIntyre, Paul C. (2010) Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices. Applied Physics Letters, 96 (8). 82904pp. doi:10.1063/1.3313946
Zhao, Mei, Liang, Renrong, Wang, Jing, Xu, Jun (2013) Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer. Applied Physics Letters, 102 (14). 142906pp. doi:10.1063/1.4800228
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