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Bordel, Damien, Guimard, Denis, Rajesh, Mohan, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Arakawa, Yasuhiko (2010) Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band. Applied Physics Letters, 96 (4). 43101pp. doi:10.1063/1.3292591

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Reference TypeJournal (article/letter/editorial)
TitleGrowth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band
JournalApplied Physics Letters
AuthorsBordel, DamienAuthor
Guimard, DenisAuthor
Rajesh, MohanAuthor
Nishioka, MasaoAuthor
Augendre, EmmanuelAuthor
Clavelier, LaurentAuthor
Arakawa, YasuhikoAuthor
Year2010 (January 25)Volume96
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3292591Search in ResearchGate
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Mindat Ref. ID8585006Long-form Identifiermindat:1:5:8585006:2
GUID0
Full ReferenceBordel, Damien, Guimard, Denis, Rajesh, Mohan, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Arakawa, Yasuhiko (2010) Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band. Applied Physics Letters, 96 (4). 43101pp. doi:10.1063/1.3292591
Plain TextBordel, Damien, Guimard, Denis, Rajesh, Mohan, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Arakawa, Yasuhiko (2010) Growth of InAs/GaAs quantum dots on germanium-on-insulator-on-silicon (GeOI) substrate with high optical quality at room temperature in the 1.3 μm band. Applied Physics Letters, 96 (4). 43101pp. doi:10.1063/1.3292591
In(2010, January) Applied Physics Letters Vol. 96 (4) AIP Publishing

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Rajesh, Mohan, Bordel, Damien, Kawaguchi, Kenichi, Faure, Stephane, Nishioka, Masao, Augendre, Emmanuel, Clavelier, Laurent, Guimard, Denis, Arakawa, Yasuhiko (2011) Growth of InAs/GaAs quantum dots on Si, Ge/Si and germanium-on-insulator-on-silicon (GeOI) substrates emitting in the 1.3μm band for silicon photonics. Journal of Crystal Growth, 315 (1). 114-118 doi:10.1016/j.jcrysgro.2010.09.019
Li, Lin, Guimard, Denis, Rajesh, Mohan, Arakawa, Yasuhiko (2008) Growth of InAs∕Sb:GaAs quantum dots on silicon substrate with high density and efficient light emission in the 1.3μm band. Applied Physics Letters, 92 (26). 263105pp. doi:10.1063/1.2952594
Guimard, Denis, Morihara, Ryo, Bordel, Damien, Tanabe, Katsuaki, Wakayama, Yuki, Nishioka, Masao, Arakawa, Yasuhiko (2010) Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage. Applied Physics Letters, 96 (20). 203507pp. doi:10.1063/1.3427392
Guimard, Denis, Lee, Hearin, Nishioka, Masao, Arakawa, Yasuhiko (2008) Growth of high-uniformity InAs∕GaAs quantum dots with ultralow density below 107cm−2 and emission above 1.3μm. Applied Physics Letters, 92 (16). 163101pp. doi:10.1063/1.2913159
Rajesh, Mohan, Nishioka, Masao, Arakawa, Yasuhiko (2016) Electroluminescence at 1.3 µm from InAs/GaAs quantum dots monolithically grown on Ge/Si substrate by metal organic chemical vapor deposition. Japanese Journal of Applied Physics, 55 (10) 100304 doi:10.7567/jjap.55.100304
Tanabe, Katsuaki, Guimard, Denis, Bordel, Damien, Arakawa, Yasuhiko (2012) High-efficiency InAs/GaAs quantum dot solar cells by metalorganic chemical vapor deposition. Applied Physics Letters, 100 (19). 193905pp. doi:10.1063/1.4714767
Guimard, Denis, Nishioka, Masao, Tsukamoto, Shiro, Arakawa, Yasuhiko (2006) High density InAs∕GaAs quantum dots with enhanced photoluminescence intensity using antimony surfactant-mediated metal organic chemical vapor deposition. Applied Physics Letters, 89 (18). 183124pp. doi:10.1063/1.2385209
Guimard, Denis, Tsukamoto, Shiro, Nishioka, Masao, Arakawa, Yasuhiko (2006) 1.55μm emission from InAs∕GaAs quantum dots grown by metal organic chemical vapor deposition via antimony incorporation. Applied Physics Letters, 89 (8). 83116pp. doi:10.1063/1.2337163
Wan, Yating, Li, Qiang, Geng, Yu, Shi, Bei, Lau, Kei May (2015) InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band. Applied Physics Letters, 107 (8). 81106pp. doi:10.1063/1.4929441
Guimard, Denis, Nishioka, Masao, Tsukamoto, Shiro, Arakawa, Yasuhiko (2007) Effect of antimony on the density of InAs/Sb:GaAs(100) quantum dots grown by metalorganic chemical-vapor deposition. Journal of Crystal Growth, 298. 548-552 doi:10.1016/j.jcrysgro.2006.10.180
Guimard, Denis, Ishida, Mitsuru, Li, Lin, Nishioka, Masao, Tanaka, Yu, Sudo, Hisao, Yamamoto, Tsuyoshi, Kondo, Hayato, Sugawara, Mitsuru, Arakawa, Yasuhiko (2009) Interface properties of InAs quantum dots produced by antimony surfactant-mediated growth: Etching of segregated antimony and its impact on the photoluminescence and lasing characteristics. Applied Physics Letters, 94 (10). 103116pp. doi:10.1063/1.3099902
 
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