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Lee, Sejoon, Shon, Yoon, Kim, Deuk Young, Won Kang, Tae, Yoon, Chong S. (2010) Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer. Applied Physics Letters, 96 (4). 42115pp. doi:10.1063/1.3294635

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer
JournalApplied Physics Letters
AuthorsLee, SejoonAuthor
Shon, YoonAuthor
Kim, Deuk YoungAuthor
Won Kang, TaeAuthor
Yoon, Chong S.Author
Year2010 (January 25)Volume96
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3294635Search in ResearchGate
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Mindat Ref. ID8585064Long-form Identifiermindat:1:5:8585064:6
GUID0
Full ReferenceLee, Sejoon, Shon, Yoon, Kim, Deuk Young, Won Kang, Tae, Yoon, Chong S. (2010) Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer. Applied Physics Letters, 96 (4). 42115pp. doi:10.1063/1.3294635
Plain TextLee, Sejoon, Shon, Yoon, Kim, Deuk Young, Won Kang, Tae, Yoon, Chong S. (2010) Enhanced ferromagnetism in H2O2-treated p-(Zn0.93Mn0.07)O layer. Applied Physics Letters, 96 (4). 42115pp. doi:10.1063/1.3294635
In(2010, January) Applied Physics Letters Vol. 96 (4) AIP Publishing

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Lee, Sejoon, Shon, Yoon, Won Kang, Tae, Yoon, Chong S., Kim, Eun Kyu, Kim, Deuk Young (2008) Dependence of ferromagnetic properties on conductivity for As-doped p-type (Zn0.93Mn0.07)O layers. Applied Physics Letters, 93 (2). 22113pp. doi:10.1063/1.2957027
Lee, Sejoon, Shon, Yoon, Lee, Seung-Woong, Hwang, Sun Jae, Lee, Hye Sung, Kang, Tae Won, Kim, Deuk Young (2006) Improved ferromagnetism of (Zn0.93Mn0.07)O through rapid thermal annealing. Applied Physics Letters, 88 (21). 212513pp. doi:10.1063/1.2206995
Lee, Sejoon, Kim, Deuk Young, Shon, Yoon, Yoon, Chong S. (2006) Structural, optical, and magnetic properties of As-doped (Zn0.93Mn0.07)O thin films. Applied Physics Letters, 89 (2). 22120pp. doi:10.1063/1.2221901
Lee, Sejoon, Shon, Yoon, Lee, Seung-Woong, Hwang, Sun Jae, Lee, Hye Sung, Kang, Tae Won, Kim, Deuk Young (2006) Publisher’s Note: “Improved ferromagnetism of (Zn0.93Mn0.07)O through rapid thermal annealing” [Appl. Phys. Lett. 88, 212513 (2006)]. Applied Physics Letters, 89 (25). 259901pp. doi:10.1063/1.2423236
Lee, Sejoon, Lee, Youngmin, Shon, Yoon, Kim, Deuk Young, Won Kang, Tae (2010) Tunneling transport properties for metal-oxide-semiconductor diode consisting of ferromagnetic ZnMnO nanocrystals. Applied Physics Letters, 97 (18). 182103pp. doi:10.1063/1.3507894
Lee, Sejoon, Lee, Youngmin, Kim, Deuk Young, Won Kang, Tae (2010) Impact of defect distribution on transport properties for Au/ZnO Schottky contacts formed with H2O2-treated unintentionally doped n-type ZnO epilayers. Applied Physics Letters, 96 (14). 142102pp. doi:10.1063/1.3374890
Shon, Yoon, Lee, Sejoon, Yoon, Im Taek, Kang, Tae Won, Lee, Youngmin, Kim, Deuk Young, Yoon, Chong S., Park, Chang Soo (2012) Formation of the ferromagnetic semiconductor InMnP:Zn through low-temperature annealing by using Mn/InP:Zn bilayer. Journal of the Korean Physical Society, 61 (7). 1065-1069 doi:10.3938/jkps.61.1065
Shon, Yoon, Lee, Sejoon, Taek Yoon, Im, Jeon, H. C., Lee, D. J., Kang, T. W., Song, J. D., Yoon, Chong S., Kim, D. Y., Park, C. S. (2011) Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxy. Applied Physics Letters, 99 (19). 192109pp. doi:10.1063/1.3660274
Baik, Jeong Min, Shon, Yoon, Kang, Tae Won, Lee, Jong-Lam (2005) Fabrication of (Ga,Mn)N nanowires with room temperature ferromagnetism using nitrogen plasma. Applied Physics Letters, 87 (4). 42105pp. doi:10.1063/1.1999862
Shon, Yoon, Lee, Sejoon, Jeon, H. C., Lee, S.-W., Kim, D. Y., Kang, T. W., Kim, Eun Kyu, Yoon, Chong S., Kim, C. K., Park, Y. J., Lee, Jeoung Ju (2006) Clarification of Mn–Zn interaction for InMnP:Zn epilayer by photoluminescence and x-ray photoelectron spectroscopy. Applied Physics Letters, 89 (4). 41905pp. doi:10.1063/1.2236201
Shon, Yoon, Kwon, Young Hae, Kim, Deuk Young, Fan, Xiangjun, Fu, Dejun, Kang, Tae Won (2001) Magnetic Characteristic of Mn+Ion Implanted GaN Epilayer. Japanese Journal of Applied Physics, 40. 5304-5305 doi:10.1143/jjap.40.5304
 
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