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Ventura, J., Araujo, J. P., Sousa, J. B., Liu, Y., Zhang, Z., Freitas, P. P. (2010) Probing atomic rearrangement events in resistive switching nanostructures. Applied Physics Letters, 96 (4). 43505pp. doi:10.1063/1.3298365

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Reference TypeJournal (article/letter/editorial)
TitleProbing atomic rearrangement events in resistive switching nanostructures
JournalApplied Physics Letters
AuthorsVentura, J.Author
Araujo, J. P.Author
Sousa, J. B.Author
Liu, Y.Author
Zhang, Z.Author
Freitas, P. P.Author
Year2010 (January 25)Volume96
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3298365Search in ResearchGate
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Mindat Ref. ID8585103Long-form Identifiermindat:1:5:8585103:4
GUID0
Full ReferenceVentura, J., Araujo, J. P., Sousa, J. B., Liu, Y., Zhang, Z., Freitas, P. P. (2010) Probing atomic rearrangement events in resistive switching nanostructures. Applied Physics Letters, 96 (4). 43505pp. doi:10.1063/1.3298365
Plain TextVentura, J., Araujo, J. P., Sousa, J. B., Liu, Y., Zhang, Z., Freitas, P. P. (2010) Probing atomic rearrangement events in resistive switching nanostructures. Applied Physics Letters, 96 (4). 43505pp. doi:10.1063/1.3298365
In(2010, January) Applied Physics Letters Vol. 96 (4) AIP Publishing

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Ventura, J, Pereira, A M, Araujo, J P, Sousa, J B, Zhang, Z, Liu, Y, Freitas, P P (2007) Three-state memory combining resistive and magnetic switching using tunnel junctions. Journal of Physics D: Applied Physics, 40. 5819-5823 doi:10.1088/0022-3727/40/19/003
Teixeira, J M, Ventura, J, Fermento, R, Araujo, J P, Sousa, J B, Wisniowski, P, Freitas, P P (2009) Electroforming, magnetic and resistive switching in MgO-based tunnel junctions. Journal of Physics D: Applied Physics, 42. 105407pp. doi:10.1088/0022-3727/42/10/105407
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Teixeira, J. M., Ventura, J., Fernández-García, M. P., Araujo, J. P., Sousa, J. B., Wisniowski, P., Freitas, P. P. (2012) Electrode band structure effects in thin MgO magnetic tunnel junctions. Applied Physics Letters, 100 (7). 72406pp. doi:10.1063/1.3687200
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