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Onuma, T., Hazu, K., Uedono, A., Sota, T., Chichibu, S. F. (2010) Identification of extremely radiative nature of AlN by time-resolved photoluminescence. Applied Physics Letters, 96 (6). 61906pp. doi:10.1063/1.3284653

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Reference TypeJournal (article/letter/editorial)
TitleIdentification of extremely radiative nature of AlN by time-resolved photoluminescence
JournalApplied Physics Letters
AuthorsOnuma, T.Author
Hazu, K.Author
Uedono, A.Author
Sota, T.Author
Chichibu, S. F.Author
Year2010 (February 8)Volume96
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.3284653Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8585417Long-form Identifiermindat:1:5:8585417:4
GUID0
Full ReferenceOnuma, T., Hazu, K., Uedono, A., Sota, T., Chichibu, S. F. (2010) Identification of extremely radiative nature of AlN by time-resolved photoluminescence. Applied Physics Letters, 96 (6). 61906pp. doi:10.1063/1.3284653
Plain TextOnuma, T., Hazu, K., Uedono, A., Sota, T., Chichibu, S. F. (2010) Identification of extremely radiative nature of AlN by time-resolved photoluminescence. Applied Physics Letters, 96 (6). 61906pp. doi:10.1063/1.3284653
In(2010, February) Applied Physics Letters Vol. 96 (6) AIP Publishing

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Chichibu, S. F., Hazu, K., Onuma, T., Uedono, A. (2011) Collateral evidence for an excellent radiative performance of AlxGa1−xN alloy films of high AlN mole fractions. Applied Physics Letters, 99 (5). 51902pp. doi:10.1063/1.3615681
Chichibu, S. F., Onuma, T., Hazu, K., Uedono, A. (2010) Major impacts of point defects and impurities on the carrier recombination dynamics in AlN. Applied Physics Letters, 97 (20). 201904pp. doi:10.1063/1.3517484
Chichibu, S. F., Uedono, A., Onuma, T., Sota, T., Haskell, B. A., DenBaars, S. P., Speck, J. S., Nakamura, S. (2005) Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques. Applied Physics Letters, 86 (2). 21914pp. doi:10.1063/1.1851619
Onuma, T., Shibata, T., Kosaka, K., Asai, K., Sumiya, S., Tanaka, M., Sota, T., Uedono, A., Chichibu, S. F. (2009) Free and bound exciton fine structures in AlN epilayers grown by low-pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 105 (2). 23529pp. doi:10.1063/1.3068335
Chichibu, S. F., Hazu, K., Ishikawa, Y., Tashiro, M., Ohtomo, T., Furusawa, K., Uedono, A., Mita, S., Xie, J., Collazo, R., Sitar, Z. (2013) Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements. Applied Physics Letters, 103 (14). 142103pp. doi:10.1063/1.4823826
Chichibu, Shigefusa F., Onuma, Takeyoshi, Hazu, Kouji, Uedono, Akira (2013) Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys. physica status solidi (c), 10 (3). 501-506 doi:10.1002/pssc.201200676
Onuma, Takeyoshi, Chichibu, Shigefusa F., Uedono, Akira, Sota, Takayuki, Cantu, Pablo, Katona, Thomas M., Keading, John F., Keller, Stacia, Mishra, Umesh K., Nakamura, Shuji, DenBaars, Steven P. (2004) Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques. Journal of Applied Physics, 95 (5). 2495-2504 doi:10.1063/1.1644041
Onuma, T., Kagamitani, Y., Hazu, K., Ishiguro, T., Fukuda, T., Chichibu, S. F. (2012) Femtosecond-laser-driven photoelectron-gun for time-resolved cathodoluminescence measurement of GaN. Review of Scientific Instruments, 83 (4). 43905pp. doi:10.1063/1.3701368
Onuma, T., Chichibu, S. F., Sota, T., Asai, K., Sumiya, S., Shibata, T., Tanaka, M. (2002) Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy. Applied Physics Letters, 81 (4). 652-654 doi:10.1063/1.1493666
Onuma, T., Uedono, A., Asamizu, H., Sato, H., Kaeding, J. F., Iza, M., DenBaars, S. P., Nakamura, S., Chichibu, S. F. (2010) Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy. Applied Physics Letters, 96 (9). 91913pp. doi:10.1063/1.3337098
Chichibu, S. F., Onuma, T., Kubota, M., Uedono, A., Sota, T., Tsukazaki, A., Ohtomo, A., Kawasaki, M. (2006) Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects. Journal of Applied Physics, 99 (9). 93505pp. doi:10.1063/1.2193162
 
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