Reference Type | Journal (article/letter/editorial) |
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Title | First-principles investigations of the dielectric properties of crystalline and amorphous Si3N4 thin films |
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Journal | Applied Physics Letters |
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Authors | Pham, T. Anh | Author |
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Li, Tianshu | Author |
Shankar, Sadasivan | Author |
Gygi, Francois | Author |
Galli, Giulia | Author |
Year | 2010 (February 8) | Volume | 96 |
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Issue | 6 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.3303987Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8585470 | Long-form Identifier | mindat:1:5:8585470:3 |
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GUID | 0 |
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Full Reference | Pham, T. Anh, Li, Tianshu, Shankar, Sadasivan, Gygi, Francois, Galli, Giulia (2010) First-principles investigations of the dielectric properties of crystalline and amorphous Si3N4 thin films. Applied Physics Letters, 96 (6). 62902pp. doi:10.1063/1.3303987 |
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Plain Text | Pham, T. Anh, Li, Tianshu, Shankar, Sadasivan, Gygi, Francois, Galli, Giulia (2010) First-principles investigations of the dielectric properties of crystalline and amorphous Si3N4 thin films. Applied Physics Letters, 96 (6). 62902pp. doi:10.1063/1.3303987 |
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In | (2010, February) Applied Physics Letters Vol. 96 (6) AIP Publishing |
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