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Landré, O., Fellmann, V., Jaffrennou, P., Bougerol, C., Renevier, H., Cros, A., Daudin, B. (2010) Molecular beam epitaxy growth and optical properties of AlN nanowires. Applied Physics Letters, 96 (6). 61912pp. doi:10.1063/1.3315943

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxy growth and optical properties of AlN nanowires
JournalApplied Physics Letters
AuthorsLandré, O.Author
Fellmann, V.Author
Jaffrennou, P.Author
Bougerol, C.Author
Renevier, H.Author
Cros, A.Author
Daudin, B.Author
Year2010 (February 8)Volume96
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.3315943Search in ResearchGate
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Mindat Ref. ID8585563Long-form Identifiermindat:1:5:8585563:2
GUID0
Full ReferenceLandré, O., Fellmann, V., Jaffrennou, P., Bougerol, C., Renevier, H., Cros, A., Daudin, B. (2010) Molecular beam epitaxy growth and optical properties of AlN nanowires. Applied Physics Letters, 96 (6). 61912pp. doi:10.1063/1.3315943
Plain TextLandré, O., Fellmann, V., Jaffrennou, P., Bougerol, C., Renevier, H., Cros, A., Daudin, B. (2010) Molecular beam epitaxy growth and optical properties of AlN nanowires. Applied Physics Letters, 96 (6). 61912pp. doi:10.1063/1.3315943
In(2010, February) Applied Physics Letters Vol. 96 (6) AIP Publishing

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Landré, O., Fellmann, V., Jaffrennou, P., Bougerol, C., Renevier, H., Daudin, B. (2010) Growth mechanism of catalyst-free [0001] GaN and AlN nanowires on Si by molecular beam epitaxy. physica status solidi (c), 7 (7). 2246-2248 doi:10.1002/pssc.200983613
Landré, O., Songmuang, R., Renard, J., Bellet-Amalric, E., Renevier, H., Daudin, B. (2008) Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion. Applied Physics Letters, 93 (18). 183109pp. doi:10.1063/1.3013840
Hestroffer, K., Leclere, C., Cantelli, V., Bougerol, C., Renevier, H., Daudin, B. (2012) In situ study of self-assembled GaN nanowires nucleation on Si(111) by plasma-assisted molecular beam epitaxy. Applied Physics Letters, 100 (21). 212107pp. doi:10.1063/1.4721521
Leclere, C., Fellmann, V., Bougerol, C., Cooper, D., Gayral, B., Proietti, M. G., Renevier, H., Daudin, B. (2013) Strain assisted inter-diffusion in GaN/AlN quantum dots. Journal of Applied Physics, 113 (3). 34311pp. doi:10.1063/1.4775587
Landré, O., Camacho, D., Bougerol, C., Niquet, Y. M., Favre-Nicolin, V., Renaud, G., Renevier, H., Daudin, B. (2010) Elastic strain relaxation in GaN/AlN nanowire superlattice. Physical Review B, 81 (15) doi:10.1103/physrevb.81.153306
Amstatt, B., Landré, O., Nicolin, V. Favre, Proietti, M. G., Bellet-Amalric, E., Bougerol, C., Renevier, H., Daudin, B. (2008) Anisotropic strain state of the [11¯00] GaN quantum dots and quantum wires. Journal of Applied Physics, 104 (6). 63521pp. doi:10.1063/1.2979324
Daudin, B., Bougerol, C., Camacho, D., Cros, A., Gayral, B., Hestroffer, K., Leclere, C., Mata, R., Niquet, Y.M., Renevier, H., Sam-Giao, D., Tourbot, G. (2012) Growth, structural and optical properties of GaN/AlN and GaN/GaInN nanowire heterostructures. Physics Procedia, 28. 5-16 doi:10.1016/j.phpro.2012.03.662
Mata, Rafael, Hestroffer, Karine, Budagosky, Jorge, Cros, Ana, Bougerol, Catherine, Renevier, Hubert, Daudin, Bruno (2011) Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature. Journal of Crystal Growth, 334 (1). 177-180 doi:10.1016/j.jcrysgro.2011.08.015
Songmuang, R., Landré, O., Daudin, B. (2007) From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer. Applied Physics Letters, 91 (25). 251902pp. doi:10.1063/1.2817941
Bougerol, C, Songmuang, R, Camacho, D, Niquet, Y M, Daudin, B (2010) Structural properties of GaN nanowires and GaN/AlN insertions grown by molecular beam epitaxy. Journal of Physics: Conference Series, 209. 12010pp. doi:10.1088/1742-6596/209/1/012010
Vermeersch, Rémy, Robin, Eric, Cros, Ana, Jacopin, Gwénolé, Daudin, Bruno, Pernot, Julien (2021) Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy. Applied Physics Letters, 119 (26) 262105pp. doi:10.1063/5.0074454
 
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