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Chen, Q., Huang, H., Chen, W., Wee, A. T. S., Feng, Y. P., Chai, J. W., Zhang, Z., Pan, J. S., Wang, S. J. (2010) In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate. Applied Physics Letters, 96 (7). 72111pp. doi:10.1063/1.3327834

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Reference TypeJournal (article/letter/editorial)
TitleIn situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate
JournalApplied Physics Letters
AuthorsChen, Q.Author
Huang, H.Author
Chen, W.Author
Wee, A. T. S.Author
Feng, Y. P.Author
Chai, J. W.Author
Zhang, Z.Author
Pan, J. S.Author
Wang, S. J.Author
Year2010 (February 15)Volume96
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.3327834Search in ResearchGate
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Mindat Ref. ID8585770Long-form Identifiermindat:1:5:8585770:0
GUID0
Full ReferenceChen, Q., Huang, H., Chen, W., Wee, A. T. S., Feng, Y. P., Chai, J. W., Zhang, Z., Pan, J. S., Wang, S. J. (2010) In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate. Applied Physics Letters, 96 (7). 72111pp. doi:10.1063/1.3327834
Plain TextChen, Q., Huang, H., Chen, W., Wee, A. T. S., Feng, Y. P., Chai, J. W., Zhang, Z., Pan, J. S., Wang, S. J. (2010) In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate. Applied Physics Letters, 96 (7). 72111pp. doi:10.1063/1.3327834
In(2010, February) Applied Physics Letters Vol. 96 (7) AIP Publishing

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Chen, Q., Feng, Y. P., Chai, J. W., Zhang, Z., Pan, J. S., Wang, S. J. (2008) Band alignment and thermal stability of HfO2 gate dielectric on SiC. Applied Physics Letters, 93 (5). 52104pp. doi:10.1063/1.2969061
Chen, Q., Yang, M., Feng, Y. P., Chai, J. W., Zhang, Z., Pan, J. S., Wang, S. J. (2009) Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation. Applied Physics Letters, 95 (16). 162104pp. doi:10.1063/1.3253420
Yang, M., Peng, G. W., Wu, R. Q., Deng, W. S., Shen, L., Chen, Q., Feng, Y. P., Chai, J. W., Pan, J. S., Wang, S. J. (2008) Interface properties of Ge3N4/Ge(111): Ab initio and x-ray photoemission spectroscopy study. Applied Physics Letters, 93 (22). 222907pp. doi:10.1063/1.3040324
Chai, J. W., Pan, J. S., Zhang, Z., Wang, S. J., Chen, Q., Huan, C. H. A. (2008) X-ray photoelectron spectroscopy studies of nitridation on 4H-SiC (0001) surface by direct nitrogen atomic source. Applied Physics Letters, 92 (9). 92119pp. doi:10.1063/1.2892036
Yang, R., Huang, Q. S., Chen, X. L., Zhang, G. Y., Gao, H.-J. (2010) Substrate doping effects on Raman spectrum of epitaxial graphene on SiC. Journal of Applied Physics, 107 (3). 34305pp. doi:10.1063/1.3283922
Yang, M., Wu, R. Q., Chen, Q., Deng, W. S., Feng, Y. P., Chai, J. W., Pan, J. S., Wang, S. J. (2009) Impact of oxide defects on band offset at GeO2/Ge interface. Applied Physics Letters, 94 (14). 142903pp. doi:10.1063/1.3115824
Chai, J. W., Yang, M., Chen, Q., Pan, J. S., Zhang, Z., Feng, Y. P., Wang, S. J. (2011) Effects of nitrogen incorporation on the electronic structure of rutile-TiO2. Journal of Applied Physics, 109 (2). 23707pp. doi:10.1063/1.3532051
Ni, Z. H., Chen, W., Fan, X. F., Kuo, J. L., Yu, T., Wee, A. T. S., Shen, Z. X. (2008) Raman spectroscopy of epitaxial graphene on a SiC substrate. Physical Review B, 77 (11) doi:10.1103/physrevb.77.115416
Yang, M., Chai, J. W., Wang, Y. Z., Wang, S. J., Feng, Y. P. (2012) Interfacial Properties of Silicon Nitride Grown on Epitaxial Graphene on 6H-SiC Substrate. The Journal of Physical Chemistry C, 116 (42). 22315-22318 doi:10.1021/jp304054u
Wang, S. J., Ong, C. K., Xu, S. Y., Chen, P., Tjiu, W. C., Chai, J. W., Huan, A. C. H., Yoo, W. J., Lim, J. S., Feng, W., Choi, W. K. (2001) Crystalline zirconia oxide on silicon as alternative gate dielectrics. Applied Physics Letters, 78 (11). 1604-1606 doi:10.1063/1.1354161
Wang, W. J., Gao, K. H., Li, Z. Q., Lin, T., Li, J., Yu, C., Feng, Z. H. (2014) Classical linear magnetoresistance in epitaxial graphene on SiC. Applied Physics Letters, 105 (18). 182102pp. doi:10.1063/1.4901175
 
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