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Hofstetter, Markus, Howgate, John, Sharp, Ian D., Funk, Maren, Stutzmann, Martin, Paretzke, Herwig G., Thalhammer, Stefan (2010) Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices. Applied Physics Letters, 96 (9). 92110pp. doi:10.1063/1.3334682

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Reference TypeJournal (article/letter/editorial)
TitleReal-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices
JournalApplied Physics Letters
AuthorsHofstetter, MarkusAuthor
Howgate, JohnAuthor
Sharp, Ian D.Author
Funk, MarenAuthor
Stutzmann, MartinAuthor
Paretzke, Herwig G.Author
Thalhammer, StefanAuthor
Year2010 (March)Volume96
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3334682Search in ResearchGate
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Mindat Ref. ID8586026Long-form Identifiermindat:1:5:8586026:3
GUID0
Full ReferenceHofstetter, Markus, Howgate, John, Sharp, Ian D., Funk, Maren, Stutzmann, Martin, Paretzke, Herwig G., Thalhammer, Stefan (2010) Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices. Applied Physics Letters, 96 (9). 92110pp. doi:10.1063/1.3334682
Plain TextHofstetter, Markus, Howgate, John, Sharp, Ian D., Funk, Maren, Stutzmann, Martin, Paretzke, Herwig G., Thalhammer, Stefan (2010) Real-time x-ray response of biocompatible solution gate AlGaN/GaN high electron mobility transistor devices. Applied Physics Letters, 96 (9). 92110pp. doi:10.1063/1.3334682
In(2010, March) Applied Physics Letters Vol. 96 (9) AIP Publishing

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Schmid, Martin, Howgate, John, Ruehm, Werner, Thalhammer, Stefan (2016) High mobility AlGaN/GaN devices for β − -dosimetry. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 819. 14-19 doi:10.1016/j.nima.2016.02.036
Howgate, J. D., Hofstetter, M., Schoell, S. J., Schmid, M., Schäfer, S., Zizak, I., Hable, V., Greubel, C., Dollinger, G., Thalhammer, S., Stutzmann, M., Sharp, I. D. (2012) Ultrahigh gain AlGaN/GaN high energy radiation detectors. physica status solidi (a), 209 (8). 1562-1567 doi:10.1002/pssa.201228097
Islam, Zahabul, Haque, Aman, Glavin, Nicholas (2018) Real-time visualization of GaN/AlGaN high electron mobility transistor failure at off-state. Applied Physics Letters, 113 (18). 183102pp. doi:10.1063/1.5046178
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Baur, B., Howgate, J., von Ribbeck, H.-G., Gawlina, Y., Bandalo, V., Steinhoff, G., Stutzmann, M., Eickhoff, M. (2006) Catalytic activity of enzymes immobilized on AlGaN∕GaN solution gate field-effect transistors. Applied Physics Letters, 89 (18). 183901pp. doi:10.1063/1.2369534
Nanjo, Takuma, Oishi, Toshiyuki, Suita, Muneyoshi, Abe, Yuji, Tokuda, Yasunori (2006) Effects of a thin Al layer insertion between AlGaN and Schottky gate on the AlGaN∕GaN high electron mobility transistor characteristics. Applied Physics Letters, 88 (4). 43503pp. doi:10.1063/1.2168036
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