Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Klochan, O., Chen, J. C. H., Micolich, A. P., Hamilton, A. R., Muraki, K., Hirayama, Y. (2010) Fabrication and characterization of an induced GaAs single hole transistor. Applied Physics Letters, 96 (9). 92103pp. doi:10.1063/1.3336011

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleFabrication and characterization of an induced GaAs single hole transistor
JournalApplied Physics Letters
AuthorsKlochan, O.Author
Chen, J. C. H.Author
Micolich, A. P.Author
Hamilton, A. R.Author
Muraki, K.Author
Hirayama, Y.Author
Year2010 (March)Volume96
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.3336011Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8586033Long-form Identifiermindat:1:5:8586033:3
GUID0
Full ReferenceKlochan, O., Chen, J. C. H., Micolich, A. P., Hamilton, A. R., Muraki, K., Hirayama, Y. (2010) Fabrication and characterization of an induced GaAs single hole transistor. Applied Physics Letters, 96 (9). 92103pp. doi:10.1063/1.3336011
Plain TextKlochan, O., Chen, J. C. H., Micolich, A. P., Hamilton, A. R., Muraki, K., Hirayama, Y. (2010) Fabrication and characterization of an induced GaAs single hole transistor. Applied Physics Letters, 96 (9). 92103pp. doi:10.1063/1.3336011
In(2010, March) Applied Physics Letters Vol. 96 (9) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Klochan, O., Clarke, W. R., Danneau, R., Micolich, A. P., Ho, L. H., Hamilton, A. R., Muraki, K., Hirayama, Y. (2006) Ballistic transport in induced one-dimensional hole systems. Applied Physics Letters, 89 (9). 92105pp. doi:10.1063/1.2337525
See, A. M., Klochan, O., Hamilton, A. R., Micolich, A. P., Aagesen, M., Lindelof, P. E. (2010) AlGaAs/GaAs single electron transistor fabricated without modulation doping. Applied Physics Letters, 96 (11). 112104pp. doi:10.1063/1.3358388
Clarke, W. R., Micolich, A. P., Hamilton, A. R., Simmons, M. Y., Muraki, K., Hirayama, Y. (2006) Fabrication of induced two-dimensional hole systems on (311)A GaAs. Journal of Applied Physics, 99 (2). 23707pp. doi:10.1063/1.2163998
Chen, J. C. H., Wang, D. Q., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis, F., Ritchie, D. A., Reuter, D., Wieck, A. D., Hamilton, A. R. (2012) Fabrication and characterization of ambipolar devices on an undoped AlGaAs/GaAs heterostructure. Applied Physics Letters, 100 (5). 52101pp. doi:10.1063/1.3673837
Klochan, O, Micolich, A P, Ho, L H, Hamilton, A R, Muraki, K, Hirayama, Y (2009) The interplay between one-dimensional confinement and two-dimensional crystallographic anisotropy effects in ballistic hole quantum wires. New Journal of Physics, 11. 43018pp. doi:10.1088/1367-2630/11/4/043018
Hamilton, A R, Danneau, R, Klochan, O, Clarke, W R, Micolich, A P, Ho, L H, Simmons, M Y, Ritchie, D A, Pepper, M, Muraki, K, Hirayama, Y (2008) The 0.7 anomaly in one-dimensional hole quantum wires. Journal of Physics: Condensed Matter, 20 (16). 164205pp. doi:10.1088/0953-8984/20/16/164205
Chen, J. C. H., Klochan, O., Micolich, A. P., Das Gupta, K., Sfigakis, F., Ritchie, D. A., Trunov, K., Reuter, D., Wieck, A. D., Hamilton, A. R. (2015) Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts. Applied Physics Letters, 106 (18). 183504pp. doi:10.1063/1.4918934
Srinivasan, A., Miserev, D. S., Hudson, K. L., Klochan, O., Muraki, K., Hirayama, Y., Reuter, D., Wieck, A. D., Sushkov, O. P., Hamilton, A. R. (2017) Detection and Control of Spin-Orbit Interactions in a GaAs Hole Quantum Point Contact. Physical Review Letters, 118 (14). doi:10.1103/physrevlett.118.146801
Srinivasan, A., Hudson, K. L., Miserev, D., Yeoh, L. A., Klochan, O., Muraki, K., Hirayama, Y., Sushkov, O. P., Hamilton, A. R. (2016) Electrical control of the sign of thegfactor in a GaAs hole quantum point contact. Physical Review B, 94 (4) doi:10.1103/physrevb.94.041406
Danneau, R., Clarke, W. R., Klochan, O., Micolich, A. P., Hamilton, A. R., Simmons, M. Y., Pepper, M., Ritchie, D. A. (2006) Conductance quantization and the 0.7Γ—2e2βˆ•h conductance anomaly in one-dimensional hole systems. Applied Physics Letters, 88 (1). 12107pp. doi:10.1063/1.2161814
MacLeod, S. J., See, A. M., Keane, Z. K., Scriven, P., Micolich, A. P., Aagesen, M., Lindelof, P. E., Hamilton, A. R. (2014) Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor. Applied Physics Letters, 104 (1). 12114pp. doi:10.1063/1.4858958
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are Β© OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 31, 2025 04:06:36
Go to top of page