Reference Type | Journal (article/letter/editorial) |
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Title | Memristive behaviors of LiNbO3 ferroelectric diodes |
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Journal | Applied Physics Letters |
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Authors | Li, Haitao | Author |
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Xia, Yidong | Author |
Xu, Bo | Author |
Guo, Hongxuan | Author |
Yin, Jiang | Author |
Liu, Zhiguo | Author |
Year | 2010 (July 5) | Volume | 97 |
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Issue | 1 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.3462067Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8586242 | Long-form Identifier | mindat:1:5:8586242:9 |
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|
GUID | 0 |
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Full Reference | Li, Haitao, Xia, Yidong, Xu, Bo, Guo, Hongxuan, Yin, Jiang, Liu, Zhiguo (2010) Memristive behaviors of LiNbO3 ferroelectric diodes. Applied Physics Letters, 97 (1). 12902pp. doi:10.1063/1.3462067 |
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Plain Text | Li, Haitao, Xia, Yidong, Xu, Bo, Guo, Hongxuan, Yin, Jiang, Liu, Zhiguo (2010) Memristive behaviors of LiNbO3 ferroelectric diodes. Applied Physics Letters, 97 (1). 12902pp. doi:10.1063/1.3462067 |
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In | (2010, July) Applied Physics Letters Vol. 97 (1) AIP Publishing |
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