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Zainal, N., Novikov, S. V., Mellor, C. J., Foxon, C. T., Kent, A. J. (2010) Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes. Applied Physics Letters, 97 (11). 112102pp. doi:10.1063/1.3488819

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Reference TypeJournal (article/letter/editorial)
TitleCurrent-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes
JournalApplied Physics Letters
AuthorsZainal, N.Author
Novikov, S. V.Author
Mellor, C. J.Author
Foxon, C. T.Author
Kent, A. J.Author
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3488819Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8586499Long-form Identifiermindat:1:5:8586499:5
GUID0
Full ReferenceZainal, N., Novikov, S. V., Mellor, C. J., Foxon, C. T., Kent, A. J. (2010) Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes. Applied Physics Letters, 97 (11). 112102pp. doi:10.1063/1.3488819
Plain TextZainal, N., Novikov, S. V., Mellor, C. J., Foxon, C. T., Kent, A. J. (2010) Current-voltage characteristics of zinc-blende (cubic) Al0.3Ga0.7N/GaN double barrier resonant tunneling diodes. Applied Physics Letters, 97 (11). 112102pp. doi:10.1063/1.3488819
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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Moss, D, Akimov, A V, Novikov, S V, Campion, R P, Staddon, C R, Zainal, N, Foxon, C T, Kent, A J (2009) Elasto-optical properties of zinc-blende (cubic) GaN measured by picosecond acoustics. Journal of Physics D: Applied Physics, 42. 115412pp. doi:10.1088/0022-3727/42/11/115412
Gohil, T., Whale, J., Lioliou, G., Novikov, S. V., Foxon, C. T., Kent, A. J., Barnett, A. M. (2016) X-ray detection with zinc-blende (cubic) GaN Schottky diodes. Scientific Reports, 6. doi:10.1038/srep29535
Novikov, S. V., Foxon, C. T., Kent, A. J. (2011) Zinc-blende (cubic) GaN bulk crystals grown by molecular beam epitaxy. physica status solidi (c), 8 (5). 1439-1444 doi:10.1002/pssc.201000736
Belyaev, A. E., Foxon, C. T., Novikov, S. V., Makarovsky, O., Eaves, L., Kappers, M. J., Humphreys, C. J. (2003) Comment on “AlN/GaN double-barrier resonant tunneling diodes grown by rf-plasma-assisted molecular-beam epitaxy” [Appl. Phys. Lett. 81, 1729 (2002)]. Applied Physics Letters, 83 (17). 3626-3627 doi:10.1063/1.1622987
Novikov, S. V., Foxon, C. T., Kent, A. J. (2010) Growth and characterization of free-standing zinc-blende GaN layers and substrates. physica status solidi (a), 207 (6). 1277-1282 doi:10.1002/pssa.200983412
Foxon, C. T., Novikov, S. V., Stanton, N. M., Campion, R. P., Kent, A. J. (2008) Free-standing zinc-blende (cubic) GaN substrates grown by a molecular beam epitaxy process. physica status solidi (b), 245 (5). 890-892 doi:10.1002/pssb.200778553
Bayram, C., Vashaei, Z., Razeghi, M. (2010) Reliability in room-temperature negative differential resistance characteristics of low-aluminum content AlGaN/GaN double-barrier resonant tunneling diodes. Applied Physics Letters, 97 (18). 181109pp. doi:10.1063/1.3515418
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Zainal, N., Novikov, S.V., Akimov, A.V., Staddon, C.R., Foxon, C.T., Kent, A.J. (2012) Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaN. Physica B: Condensed Matter, 407 (15). 2964-2966 doi:10.1016/j.physb.2011.08.088
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Powell, R. E. L., Novikov, S. V., Foxon, C. T., Akimov, A. V., Kent, A. J. (2014) Photoluminescence of magnesium and silicon doped cubic GaN. physica status solidi (c), 11 (3). 385-388 doi:10.1002/pssc.201300468
 
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