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Park, Young S., Lee, Minyoung, Jeon, Kiyoung, Yoon, Im T., Shon, Yoon, Im, Hyunsik, Park, C. J., Cho, Hoon Y., Han, Myung-Soo (2010) Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect. Applied Physics Letters, 97 (11). 112110pp. doi:10.1063/1.3491798

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Reference TypeJournal (article/letter/editorial)
TitleDeep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect
JournalApplied Physics Letters
AuthorsPark, Young S.Author
Lee, MinyoungAuthor
Jeon, KiyoungAuthor
Yoon, Im T.Author
Shon, YoonAuthor
Im, HyunsikAuthor
Park, C. J.Author
Cho, Hoon Y.Author
Han, Myung-SooAuthor
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3491798Search in ResearchGate
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Mindat Ref. ID8586587Long-form Identifiermindat:1:5:8586587:9
GUID0
Full ReferencePark, Young S., Lee, Minyoung, Jeon, Kiyoung, Yoon, Im T., Shon, Yoon, Im, Hyunsik, Park, C. J., Cho, Hoon Y., Han, Myung-Soo (2010) Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect. Applied Physics Letters, 97 (11). 112110pp. doi:10.1063/1.3491798
Plain TextPark, Young S., Lee, Minyoung, Jeon, Kiyoung, Yoon, Im T., Shon, Yoon, Im, Hyunsik, Park, C. J., Cho, Hoon Y., Han, Myung-Soo (2010) Deep level transient spectroscopy in plasma-assisted molecular beam epitaxy grown Al0.2Ga0.8N/GaN interface and the rapid thermal annealing effect. Applied Physics Letters, 97 (11). 112110pp. doi:10.1063/1.3491798
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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Park, Chan Jin, Park, Young Shin, Lee, Ho Sang, Yoon, Im-Taek, Kang, Tae Won, Cho, Hoon Young, Oh, Jae-Eung, Wang, Kang L. (2005) Deep-Level Defects in AlGaN/GaN Heterostructures Grown Using rf-Plasma-Assisted Molecular Beam Epitaxy. Japanese Journal of Applied Physics, 44 (4) 1722-1725 doi:10.1143/jjap.44.1722
Shon, Yoon, Lee, Sejoon, Taek Yoon, Im, Jeon, H. C., Lee, D. J., Kang, T. W., Song, J. D., Yoon, Chong S., Kim, D. Y., Park, C. S. (2011) Clarification of enhanced ferromagnetism in Be-codoped InMnP fabricated using Mn/InP:Be bilayers grown by molecular beam epitaxy. Applied Physics Letters, 99 (19). 192109pp. doi:10.1063/1.3660274
Park, Y. S., Park, C. J., Park, C. M., Na, J. H., Oh, J. S., Yoon, I. T., Cho, H. Y., Kang, T. W., Oh, Jae-Eung (2005) Deep level defects in Si-doped AlxGa1−xN films grown by molecular-beam epitaxy. Applied Physics Letters, 86 (15). 152109pp. doi:10.1063/1.1887817
Park, Young S., Park, Chang M., Lee, J. W., Cho, H. Y., Kang, T. W., Yoo, Kyung-Hwa, Son, Min-Soo, Han, Myung-Soo (2008) Electrical transport properties of a nanorod GaN p-n homojunction grown by molecular-beam epitaxy. Journal of Applied Physics, 103 (6). 66107pp. doi:10.1063/1.2896636
Lee, J. W., Shon, Yoon, Subramaniam, N. G., Park, C. S., Kim, E. K., Im, Hyunsik, Kim, H. S. (2015) Relevant characteristics of undoped GaMnN grown by using molecular beam epitaxy. Journal of the Korean Physical Society, 67 (3). 541-546 doi:10.3938/jkps.67.541
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