Vote for your favorite mineral in #MinCup25! - Zunyite vs. Molybdenite
It's the visually-unmistakable #zunyite vs the physically funky #molybdenite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

(2010) Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth. Applied Physics Letters, 97 (14). 141906pp. doi:10.1063/1.3497195

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleStrain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth
JournalApplied Physics Letters
Year2010 (October 4)Volume97
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3497195Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8587089Long-form Identifiermindat:1:5:8587089:9
GUID0
Full Reference(2010) Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth. Applied Physics Letters, 97 (14). 141906pp. doi:10.1063/1.3497195
Plain Text(2010) Strain-doping coupling dynamics in phosphorus doped Si:C formed by solid phase epitaxial regrowth. Applied Physics Letters, 97 (14). 141906pp. doi:10.1063/1.3497195
In(2010, October) Applied Physics Letters Vol. 97 (14) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Chuang, Yao-Teng, Hu, Kuan-Kan, Woon, Wei-Yen (2014) On the doping limit for strain stability retention in phosphorus doped Si:C. Journal of Applied Physics, 116 (3). 33503pp. doi:10.1063/1.4890303
Chen, G., Wan, C. (2010) Residual strain in thermally annealed periodic mesoporous silica revealed by x-ray scattering. Applied Physics Letters, 96 (14). 141906pp. doi:10.1063/1.3380663
Ghannam, M. Y., Dutton, R. W. (1987) Solid phase epitaxial regrowth of boron‐doped polycrystalline silicon deposited by low‐pressure chemical vapor deposition. Applied Physics Letters, 51 (8). 611-613 doi:10.1063/1.98363
Ruffell, S., Mitchell, I. V., Simpson, P. J. (2005) Solid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation. Journal of Applied Physics, 98 (8). 83522pp. doi:10.1063/1.2113409
Licoppe, C., Savary, H. (1987) High‐pressure study of solid phase epitaxial regrowth in implanted amorphous GaAs. Applied Physics Letters, 51 (10). 740-742 doi:10.1063/1.98852
Lee, C., Haynes, T. E., Jones, K. S. (1993) Kinetics of solid phase epitaxial regrowth in amorphized Si0.88Ge0.12measured by time‐resolved reflectivity. Applied Physics Letters, 62 (5). 501-503 doi:10.1063/1.108892
Solovyov, Vyacheslav F., Gibert, Marta, Puig, Teresa, Obradors, Xavier (2010) Size-dependent strain in epitaxial (001) gadolinium-doped ceria nanoislands. Applied Physics Letters, 97 (23). 231904pp. doi:10.1063/1.3527079
Lai, Haoyu, Cea, Stephen M., Kennel, Harold, Dunham, Scott T. (2012) Molecular dynamics modeling of solid phase epitaxial regrowth. Journal of Applied Physics, 111 (11). 114504pp. doi:10.1063/1.4721407
Martin-Bragado, Ignacio (2011) {111} local configurations: The main source of silicon defects during solid phase epitaxial regrowth modeled by lattice kinetic Monte Carlo. Applied Physics Letters, 98 (23). 233109pp. doi:10.1063/1.3596466
Christou, A., Wilkins, B. R., Davey, J. E. (1983) Solid phase epitaxial regrowth of amorphous silicon on molecular beam epitaxial silicon/Si layers. Applied Physics Letters, 42 (12). 1021-1023 doi:10.1063/1.93827
Roccaforte, F., Bolse, W., Lieb, K. P. (1998) Solid phase epitaxial regrowth of ion beam-amorphized α-quartz. Applied Physics Letters, 73 (10). 1349-1351 doi:10.1063/1.122159
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 12, 2025 01:00:44
Go to top of page