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Bhattacharyya, Somnath, Churochkin, Dmitry, Erasmus, Rudolph M. (2010) Anomalous Raman features of silicon nanowires under high pressure. Applied Physics Letters, 97 (14). 141912pp. doi:10.1063/1.3499297

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Reference TypeJournal (article/letter/editorial)
TitleAnomalous Raman features of silicon nanowires under high pressure
JournalApplied Physics Letters
AuthorsBhattacharyya, SomnathAuthor
Churochkin, DmitryAuthor
Erasmus, Rudolph M.Author
Year2010 (October 4)Volume97
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.3499297Search in ResearchGate
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Mindat Ref. ID8587130Long-form Identifiermindat:1:5:8587130:2
GUID0
Full ReferenceBhattacharyya, Somnath, Churochkin, Dmitry, Erasmus, Rudolph M. (2010) Anomalous Raman features of silicon nanowires under high pressure. Applied Physics Letters, 97 (14). 141912pp. doi:10.1063/1.3499297
Plain TextBhattacharyya, Somnath, Churochkin, Dmitry, Erasmus, Rudolph M. (2010) Anomalous Raman features of silicon nanowires under high pressure. Applied Physics Letters, 97 (14). 141912pp. doi:10.1063/1.3499297
In(2010, October) Applied Physics Letters Vol. 97 (14) AIP Publishing

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Chimowa, George, Sendova, Mariana, Flahaut, Emmanuel, Churochkin, Dmitry, Bhattacharyya, Somnath (2011) Tuning the electrical transport properties of double-walled carbon nanotubes by semiconductor and semi-metal filling. Journal of Applied Physics, 110 (12). 123708pp. doi:10.1063/1.3670879
Chimowa, George, Erasmus, Rudolph M., Bhattacharyya, Somnath (2015) High-frequency electrical transport in nitrogen incorporated nano-crystalline diamond films in the GHz regime. EPL (Europhysics Letters), 109. 67002pp. doi:10.1209/0295-5075/109/67002
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Ippolito, M., Mattoni, A., Colombo, L., Cleri, F. (2005) Fracture toughness of nanostructured silicon carbide. Applied Physics Letters, 87 (14). 141912pp. doi:10.1063/1.2081135
 
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