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Michon, A., Vézian, S., Ouerghi, A., Zielinski, M., Chassagne, T., Portail, M. (2010) Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition. Applied Physics Letters, 97 (17). 171909pp. doi:10.1063/1.3503972

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Reference TypeJournal (article/letter/editorial)
TitleDirect growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
JournalApplied Physics Letters
AuthorsMichon, A.Author
Vézian, S.Author
Ouerghi, A.Author
Zielinski, M.Author
Chassagne, T.Author
Portail, M.Author
Year2010 (October 25)Volume97
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.3503972Search in ResearchGate
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Mindat Ref. ID8587581Long-form Identifiermindat:1:5:8587581:2
GUID0
Full ReferenceMichon, A., Vézian, S., Ouerghi, A., Zielinski, M., Chassagne, T., Portail, M. (2010) Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition. Applied Physics Letters, 97 (17). 171909pp. doi:10.1063/1.3503972
Plain TextMichon, A., Vézian, S., Ouerghi, A., Zielinski, M., Chassagne, T., Portail, M. (2010) Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition. Applied Physics Letters, 97 (17). 171909pp. doi:10.1063/1.3503972
In(2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing

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Michon, A., Vézian, S., Roudon, E., Lefebvre, D., Zielinski, M., Chassagne, T., Portail, M. (2013) Effects of pressure, temperature, and hydrogen during graphene growth on SiC(0001) using propane-hydrogen chemical vapor deposition. Journal of Applied Physics, 113 (20). 203501pp. doi:10.1063/1.4806998
Portail, M., Michon, A., Vézian, S., Lefebvre, D., Chenot, S., Roudon, E., Zielinski, M., Chassagne, T., Tiberj, A., Camassel, J., Cordier, Y. (2012) Growth mode and electric properties of graphene and graphitic phase grown by argon–propane assisted CVD on 3C–SiC/Si and 6H–SiC. Journal of Crystal Growth, 349 (1). 27-35 doi:10.1016/j.jcrysgro.2012.04.004
Michon, A., Tiberj, A., Vézian, S., Roudon, E., Lefebvre, D., Portail, M., Zielinski, M., Chassagne, T., Camassel, J., Cordier, Y. (2014) Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition. Applied Physics Letters, 104 (7). 71912pp. doi:10.1063/1.4866285
Michon, A., Largeau, L., Mauguin, O., Ouerghi, A., Vézian, S., Lefebvre, D., Roudon, E., Zielinski, M., Chassagne, T., Portail, M. (2012) Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain. physica status solidi (c), 9 (2). 175-178 doi:10.1002/pssc.201100225
Michon, Adrien, Roudon, Elodie, Portail, Marc, Lefebvre, Denis, Vézian, Stephane, Cordier, Yvon, Tiberj, Antoine, Chassagne, Thierry, Zielinski, Marcin (2012) Graphene/SiC Interface Control Using Propane-Hydrogen CVD on 6H-SiC(0001) and 3C-SiC(111)/Si(111). Materials Science Forum, 711. 253-257 doi:10.4028/www.scientific.net/msf.711.253
Portail, M., Vézian, S., Teisseire, M., Michon, A., Chassagne, T., Zielinski, M. (2014) Structural trends in Si dots formation on SiC surfaces using CVD environment. Journal of Crystal Growth, 404. 157-163 doi:10.1016/j.jcrysgro.2014.07.026
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Ouerghi, A., Kahouli, A., Lucot, D., Portail, M., Travers, L., Gierak, J., Penuelas, J., Jegou, P., Shukla, A., Chassagne, T., Zielinski, M. (2010) Epitaxial graphene on cubic SiC(111)/Si(111) substrate. Applied Physics Letters, 96 (19). 191910pp. doi:10.1063/1.3427406
Ouerghi, Abdelkarim, Portail, Marc, Kahouli, A., Travers, L., Chassagne, Thierry, Zielinski, Marcin (2010) Epitaxial Graphene Elaborated on 3C-SiC(111)/Si Epilayers. Materials Science Forum, 645. 585-588 doi:10.4028/www.scientific.net/msf.645-648.585
Ouerghi, A., Belkhou, R., Marangolo, M., Silly, M. G., El Moussaoui, S., Eddrief, M., Largeau, L., Portail, M., Sirotti, F. (2010) Structural coherency of epitaxial graphene on 3C–SiC(111) epilayers on Si(111). Applied Physics Letters, 97 (16). 161905pp. doi:10.1063/1.3497287
Zielinski, M., Michaud, J. F., Jiao, S., Chassagne, T., Bazin, A. E., Michon, A., Portail, M., Alquier, D. (2012) Experimental observation and analytical model of the stress gradient inversion in 3C-SiC layers on silicon. Journal of Applied Physics, 111 (5). 53507pp. doi:10.1063/1.3687370
 
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