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Miyasako, Takaaki, Trinh, Bui Nguyen Quoc, Onoue, Masatoshi, Kaneda, Toshihiko, Tue, Phan Trong, Tokumitsu, Eisuke, Shimoda, Tatsuya (2010) Totally solution-processed ferroelectric-gate thin-film transistor. Applied Physics Letters, 97 (17). 173509pp. doi:10.1063/1.3508958

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Reference TypeJournal (article/letter/editorial)
TitleTotally solution-processed ferroelectric-gate thin-film transistor
JournalApplied Physics Letters
AuthorsMiyasako, TakaakiAuthor
Trinh, Bui Nguyen QuocAuthor
Onoue, MasatoshiAuthor
Kaneda, ToshihikoAuthor
Tue, Phan TrongAuthor
Tokumitsu, EisukeAuthor
Shimoda, TatsuyaAuthor
Year2010 (October 25)Volume97
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.3508958Search in ResearchGate
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Mindat Ref. ID8587687Long-form Identifiermindat:1:5:8587687:5
GUID0
Full ReferenceMiyasako, Takaaki, Trinh, Bui Nguyen Quoc, Onoue, Masatoshi, Kaneda, Toshihiko, Tue, Phan Trong, Tokumitsu, Eisuke, Shimoda, Tatsuya (2010) Totally solution-processed ferroelectric-gate thin-film transistor. Applied Physics Letters, 97 (17). 173509pp. doi:10.1063/1.3508958
Plain TextMiyasako, Takaaki, Trinh, Bui Nguyen Quoc, Onoue, Masatoshi, Kaneda, Toshihiko, Tue, Phan Trong, Tokumitsu, Eisuke, Shimoda, Tatsuya (2010) Totally solution-processed ferroelectric-gate thin-film transistor. Applied Physics Letters, 97 (17). 173509pp. doi:10.1063/1.3508958
In(2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing

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Miyasako, Takaaki, Trinh, Bui Nguyen Quoc, Onoue, Masatoshi, Kaneda, Toshihiko, Tue, Phan Trong, Tokumitsu, Eisuke, Shimoda, Tatsuya (2011) Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.1143/jjap.50.04dd09
Miyasako, Takaaki, Trinh, Bui Nguyen Quoc, Onoue, Masatoshi, Kaneda, Toshihiko, Tue, Phan Trong, Tokumitsu, Eisuke, Shimoda, Tatsuya (2011) Ferroelectric-Gate Thin-Film Transistor Fabricated by Total Solution Deposition Process. Japanese Journal of Applied Physics, 50 (4) 4 doi:10.7567/jjap.50.04dd09
Thanh, Pham Van, Trinh, Bui Nguyen Quoc, Miyasako, Takaaki, Tue, Phan Trong, Tokumitsu, Eisuke, Shimoda, Tatsuya (2012) Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)4Ti3O12/Pb(Zr,Ti)O3Stacked Gate Insulator. Japanese Journal of Applied Physics, 51 (9) 9 doi:10.7567/jjap.51.09la09
Thanh, Pham Van, Trinh, Bui Nguyen Quoc, Miyasako, Takaaki, Tue, Phan Trong, Tokumitsu, Eisuke, Shimoda, Tatsuya (2012) Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)$_{4}$Ti$_{3}$O$_{12}$/Pb(Zr,Ti)O$_{3}$ Stacked Gate Insulator. Japanese Journal of Applied Physics, 51. 9 doi:10.1143/jjap.51.09la09
Phan, Tue Trong, Miyasako, Takaaki, Higashimine, Koichi, Tokumitsu, Eisuke, Shimoda, Tatsuya (2013) Surface-modified lead–zirconium-titanate system for solution-processed ferroelectric-gate thin-film transistors. Applied Physics A, 113. 333-338 doi:10.1007/s00339-013-7971-1
Trinh, Bui Nguyen Quoc, Tue, Phan Trong (2010) A low-temperature crystallization path for device-quality ferroelectric films. Applied Physics Letters, 97 (10). 102905pp. doi:10.1063/1.3486462
Inoue, Satoshi, Ariga, Tomoki, Matsumoto, Shin, Onoue, Masatoshi, Miyasako, Takaaki, Tokumitsu, Eisuke, Chinone, Norimichi, Cho, Yasuo, Shimoda, Tatsuya (2014) Investigation of solution-processed bismuth-niobium-oxide films. Journal of Applied Physics, 116 (15). 154103pp. doi:10.1063/1.4898323
Umeda, Kenichi, Miyasako, Takaaki, Sugiyama, Ayumu, Tanaka, Atsushi, Suzuki, Masayuki, Tokumitsu, Eisuke, Shimoda, Tatsuya (2013) Impact of UV/O3 treatment on solution-processed amorphous InGaZnO4 thin-film transistors. Journal of Applied Physics, 113 (18). 184509pp. doi:10.1063/1.4804667
Miyasako, Takaaki, Senoo, Masaru, Tokumitsu, Eisuke (2005) Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability. Applied Physics Letters, 86 (16). 162902pp. doi:10.1063/1.1905800
Ariga, Tomoki, Inoue, Satoshi, Matsumoto, Shin, Onoue, Masatoshi, Miyasako, Takaaki, Tokumitsu, Eisuke, Shimoda, Tatsuya (2015) High-relative-dielectric-constant bismuth–niobium–oxide films prepared using Nb-rich precursor solution. Japanese Journal of Applied Physics, 54 (9) 91501 doi:10.7567/jjap.54.091501
Tue, Phan Trong, Fukada, Kazuhiro, Shimoda, Tatsuya (2017) High-performance oxide thin film transistor fully fabricated by a direct rheology-imprinting. Applied Physics Letters, 111 (22). 223504pp. doi:10.1063/1.4998816
 
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