Tablero, C. (2010) Ionization energy levels in C-doped InxGa1−xN alloys. Applied Physics Letters, 97 (19). 192102pp. doi:10.1063/1.3515854
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Ionization energy levels in C-doped InxGa1−xN alloys | ||
Journal | Applied Physics Letters | ||
Authors | Tablero, C. | Author | |
Year | 2010 (November 8) | Volume | 97 |
Issue | 19 | ||
Publisher | AIP Publishing | ||
DOI | doi:10.1063/1.3515854Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 8587997 | Long-form Identifier | mindat:1:5:8587997:9 |
GUID | 0 | ||
Full Reference | Tablero, C. (2010) Ionization energy levels in C-doped InxGa1−xN alloys. Applied Physics Letters, 97 (19). 192102pp. doi:10.1063/1.3515854 | ||
Plain Text | Tablero, C. (2010) Ionization energy levels in C-doped InxGa1−xN alloys. Applied Physics Letters, 97 (19). 192102pp. doi:10.1063/1.3515854 | ||
In | (2010, November) Applied Physics Letters Vol. 97 (19) AIP Publishing |
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