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Park, Jin-Woo, Baik, Hong-Koo, Lim, Taekyung, Ju, Sanghyun (2010) Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment. Applied Physics Letters, 97 (20). 203508pp. doi:10.1063/1.3518485

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Reference TypeJournal (article/letter/editorial)
TitleThreshold voltage control of oxide nanowire transistors using nitrogen plasma treatment
JournalApplied Physics Letters
AuthorsPark, Jin-WooAuthor
Baik, Hong-KooAuthor
Lim, TaekyungAuthor
Ju, SanghyunAuthor
Year2010 (November 15)Volume97
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.3518485Search in ResearchGate
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Mindat Ref. ID8588375Long-form Identifiermindat:1:5:8588375:0
GUID0
Full ReferencePark, Jin-Woo, Baik, Hong-Koo, Lim, Taekyung, Ju, Sanghyun (2010) Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment. Applied Physics Letters, 97 (20). 203508pp. doi:10.1063/1.3518485
Plain TextPark, Jin-Woo, Baik, Hong-Koo, Lim, Taekyung, Ju, Sanghyun (2010) Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment. Applied Physics Letters, 97 (20). 203508pp. doi:10.1063/1.3518485
In(2010, November) Applied Physics Letters Vol. 97 (20) AIP Publishing

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Park, Jin-Woo, Baik, Hong-Koo, Lim, Taekyung, Ju, Sanghyun (2011) Response to “Comment on ‘Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment’” [Appl. Phys. Lett. 98, 176101 (2011)]. Applied Physics Letters, 98 (17). 176102pp. doi:10.1063/1.3584002
Lin, Yow-Jon, Tsai, Chia-Lung (2011) Comment on “Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment” [Appl. Phys. Lett. 97, 203508 (2010)]. Applied Physics Letters, 98 (17). 176101pp. doi:10.1063/1.3584000
Lim, Taekyung, Kim, Dongchool, Ju, Sanghyun (2013) Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment. Applied Physics Letters, 103 (1). 13107pp. doi:10.1063/1.4813016
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Kim, Sangdan, Ju, Sanghyun (2012) Threshold voltage control for SnO2 nanowire transistors by gas treatment. Journal of the Korean Physical Society, 61 (8). 1287-1291 doi:10.3938/jkps.61.1287
Park, Jong-Tae, Kim, Jin Young, Lee, Chi-Woo, Colinge, Jean-Pierre (2010) Low-temperature conductance oscillations in junctionless nanowire transistors. Applied Physics Letters, 97 (17). 172101pp. doi:10.1063/1.3506899
Lim, Taekyung, Bong, Jihye, Mills, Edmund M., Kim, Sangtae, Ju, Sanghyun (2015) Highly Stable Operation of Metal Oxide Nanowire Transistors in Ambient Humidity, Water, Blood, and Oxygen. ACS Applied Materials & Interfaces, 7. 16296-16302 doi:10.1021/acsami.5b03038
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Kim, Hwansoo, Park, Ji-Hoon, Suh, Misook, Real Ahn, Joung, Ju, Sanghyun (2012) Horizontally aligned ZnO nanowire transistors using patterned graphene thin films. Applied Physics Letters, 100 (6). 63112pp. doi:10.1063/1.3684614
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