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Cláudio de Carvalho, Luiz, Schleife, André, Fuchs, Frank, Bechstedt, Friedhelm (2010) Valence-band splittings in cubic and hexagonal AlN, GaN, and InN. Applied Physics Letters, 97 (23). 232101pp. doi:10.1063/1.3524234

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Reference TypeJournal (article/letter/editorial)
TitleValence-band splittings in cubic and hexagonal AlN, GaN, and InN
JournalApplied Physics Letters
AuthorsCláudio de Carvalho, LuizAuthor
Schleife, AndréAuthor
Fuchs, FrankAuthor
Bechstedt, FriedhelmAuthor
Year2010 (December 6)Volume97
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.3524234Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8588800Long-form Identifiermindat:1:5:8588800:1
GUID0
Full ReferenceCláudio de Carvalho, Luiz, Schleife, André, Fuchs, Frank, Bechstedt, Friedhelm (2010) Valence-band splittings in cubic and hexagonal AlN, GaN, and InN. Applied Physics Letters, 97 (23). 232101pp. doi:10.1063/1.3524234
Plain TextCláudio de Carvalho, Luiz, Schleife, André, Fuchs, Frank, Bechstedt, Friedhelm (2010) Valence-band splittings in cubic and hexagonal AlN, GaN, and InN. Applied Physics Letters, 97 (23). 232101pp. doi:10.1063/1.3524234
In(2010, December) Applied Physics Letters Vol. 97 (23) AIP Publishing

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de Carvalho, Luiz Cláudio, Schleife, André, Bechstedt, Friedhelm (2011) Influence of exchange and correlation on structural and electronic properties of AlN, GaN, and InN polytypes. Physical Review B, 84 (19) doi:10.1103/physrevb.84.195105
Belabbes, A., de Carvalho, L. C., Schleife, A., Bechstedt, F. (2011) Cubic inclusions in hexagonal AlN, GaN, and InN: Electronic states. Physical Review B, 84 (12) doi:10.1103/physrevb.84.125108
de Carvalho, Luiz Cláudio, Schleife, André, Furthmüller, Jürgen, Bechstedt, Friedhelm (2013) Ab initiocalculation of optical properties with excitonic effects in wurtzite InxGa1−xN and InxAl1−xN alloys. Physical Review B, 87 (19) doi:10.1103/physrevb.87.195211
Wei, Su‐Huai, Zunger, Alex (1996) Valence band splittings and band offsets of AlN, GaN, and InN. Applied Physics Letters, 69 (18). 2719-2721 doi:10.1063/1.117689
de Carvalho, Luiz Cláudio, Furthmüller, Jürgen, Bechstedt, Friedhelm (2013) In4d and Ga3d levels in InxX1−xN (X = Ga, Al) alloys. Applied Physics Letters, 102 (17). 172105pp. doi:10.1063/1.4803666
de Carvalho, Luiz Cláudio, Schleife, André, Furthmüller, Jürgen, Bechstedt, Friedhelm (2012) Distribution of cations in wurtzitic InxGa1−xN and InxAl1−xN alloys: Consequences for energetics and quasiparticle electronic structures. Physical Review B, 85 (11) doi:10.1103/physrevb.85.115121
Höffling, B., Schleife, A., Fuchs, F., Rödl, C., Bechstedt, F. (2010) Band lineup between silicon and transparent conducting oxides. Applied Physics Letters, 97 (3). 32116pp. doi:10.1063/1.3464562
Schleife, André, Rödl, Claudia, Fuchs, Frank, Hannewald, Karsten, Bechstedt, Friedhelm (2011) Optical Absorption in Degenerately Doped Semiconductors: Mott Transition or Mahan Excitons?. Physical Review Letters, 107 (23). doi:10.1103/physrevlett.107.236405
Schleife, A., Rödl, C., Fuchs, F., Furthmüller, J., Bechstedt, F. (2007) Strain influence on valence-band ordering and excitons in ZnO: Anab initiostudy. Applied Physics Letters, 91 (24). 241915pp. doi:10.1063/1.2825277
Rakel, Munise, Cobet, Christoph, Esser, Norbert, Fuchs, Frank, Bechstedt, Friedhelm, Goldhahn, Rüdiger, Schmidt, Wolf Gero, Schaff, William (2008) GaN and InN conduction-band states studied by ellipsometry. Physical Review B, 77 (11) doi:10.1103/physrevb.77.115120
Gorczyca, I., Skrobas, K., Suski, T., Christensen, N. E., Svane, A. (2014) Band gaps and internal electric fields in semipolar short period InN/GaN superlattices. Applied Physics Letters, 104 (23). 232101pp. doi:10.1063/1.4882902
 
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