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Connelly, Blair C., Metcalfe, Grace D., Shen, Hongen, Wraback, Michael (2010) Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence. Applied Physics Letters, 97 (25). 251117pp. doi:10.1063/1.3529458

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Reference TypeJournal (article/letter/editorial)
TitleDirect minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
JournalApplied Physics Letters
AuthorsConnelly, Blair C.Author
Metcalfe, Grace D.Author
Shen, HongenAuthor
Wraback, MichaelAuthor
Year2010 (December 20)Volume97
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3529458Search in ResearchGate
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Mindat Ref. ID8589219Long-form Identifiermindat:1:5:8589219:2
GUID0
Full ReferenceConnelly, Blair C., Metcalfe, Grace D., Shen, Hongen, Wraback, Michael (2010) Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence. Applied Physics Letters, 97 (25). 251117pp. doi:10.1063/1.3529458
Plain TextConnelly, Blair C., Metcalfe, Grace D., Shen, Hongen, Wraback, Michael (2010) Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence. Applied Physics Letters, 97 (25). 251117pp. doi:10.1063/1.3529458
In(2010, December) Applied Physics Letters Vol. 97 (25) AIP Publishing

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Steenbergen, E. H., Connelly, B. C., Metcalfe, G. D., Shen, H., Wraback, M., Lubyshev, D., Qiu, Y., Fastenau, J. M., Liu, A. W. K., Elhamri, S., Cellek, O. O., Zhang, Y.-H. (2011) Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb. Applied Physics Letters, 99 (25). 251110pp. doi:10.1063/1.3671398
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Metcalfe, Grace D., Shen, Hongen, Wraback, Michael, Hirai, Asako, Wu, Feng, Speck, James S. (2008) Enhanced terahertz radiation from high stacking fault density nonpolar GaN. Applied Physics Letters, 92 (24). 241106pp. doi:10.1063/1.2937911
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Donetsky, Dmitry, Belenky, Gregory, Svensson, Stefan, Suchalkin, Sergei (2010) Minority carrier lifetime in type-2 InAs–GaSb strained-layer superlattices and bulk HgCdTe materials. Applied Physics Letters, 97 (5). 52108pp. doi:10.1063/1.3476352
Giesecke, J. A., Schubert, M. C., Walter, D., Warta, W. (2010) Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence. Applied Physics Letters, 97 (9). 92109pp. doi:10.1063/1.3485216
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